Fairchild Semiconductor FDR6580 Datasheet
FDR6580
N-Chennal 2.5V Specified PowerTrenchTM MOSFET
FDR6580
April 1999
ADVANCE INFORMATION
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
Load switch
Motor driving
Power Management
S
D
D
S
G
SuperSOT -8
TM
Absolute Maximum Ratings
D
D
D
TA = 25°C unless otherwise noted
Features
11 A, 20 V. R
R
DS(ON)
DS(ON)
= 0.009 Ω @ V
= 0.013 Ω @ V
= 4.5 V
GS
= 2.5 V.
GS
Low gate charge.
High performance trench technology for extremely
low R
DS(ON)
.
Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
8V
±
11 A
- Pulsed 50
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.8 W
1.0
0.9
Operating and Storage Junction Temperature Range -55 to +150
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Juncti on-to-Case
(Note 1a)
(Note 1)
70
20
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
.6580 FDR6580 13’’ 12mm 3000 units
1999 Fairchild Semiconductor Corporation
C
°
C/W
°
C/W
°
FDR6580, Rev. A
FDR6580
Electrical Characteristics T
=25oC unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
DSS
Drain-Source Breakdown Voltage
= 0 V, ID = 250 µA
V
GS
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate-Body Leakage, Forward VGS = 8 V, VDS = 0 V 10
Gate-Body Leakage, Reverse VGS = -8 V, VDS = 0 V -10
20 V
ON CHARACTERISTICS (Note 2)
V
GS(TH)
R
DS(ON)
I
D(ON)
Gate Threshold Voltage
Static Drain-Sourc e
On-Resistance
= VGS, ID = 250 µA
V
DS
VGS = 4.5 V, ID = 11 A
V
= 2.5 V, ID = 9.3 A
GS
On-State Drain Current VGS = 4.5 V, VDS = 5 V 25 A
0.4 1.5 V
0.009
0.013
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
Maximum Continuous Drain-S ource Diode Forward Current 1.5 A
Drain-Source Diode Forward
VGS = 0 V, IS = 1.5 A (Note 2) 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
µA
µA
µA
Ω
a) 70° C/W when mounted on a
1.0 in2 pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
b) 125 ° C/W when mounted on
a 0.026 in2 pad of 2oz. copper.
c) 135° C/W when mounted
on a minimum pad.
FDR6580, Rev. A
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