Fairchild Semiconductor F5E3, F5E2, F5E1 Datasheet
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
13
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
ANODE
(CASE)
Ø0.020 (0.51) 2X
0.155 (3.94)
MAX
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
7. Total power output, PO, is the total power radiated by the device into
a solid angle of 2 ! steradians.
PACKAGE DIMENSIONS
FEATURES
• Good optical to mechanical alignment
• Mechanically and wavelength matched
to the TO-18 series phototransistor
• Hermetically sealed package
• High irradiance level
Parameter Symbol Rating Unit
Operating Temperature T
OPR
-65 to +125 °C
Storage Temperature T
STG
-65 to +150 °C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec °C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec °C
Continuous Forward Current I
F
100 mA
Forward Current (pw, 10µs; 100Hz) I
F
3A
Forward Current (pw, 1µs; 200Hz) I
F
10 A
Reverse Voltage V
R
3V
Power Dissipation(TA= 25°C)
(1)
P
D
170 mW
Power Dissipation(TC= 25°C)
(2)
P
D
1.3 W
ABSOLUTE MAXIMUM RATINGS
(TA= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
DESCRIPTION
The F5E series are 880nm LEDs in a
wide angle, TO-46 package.
SCHEMATIC
PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS
Peak Emission Wavelength IF= 100 mA "
PE
— 880 — nm
Emission Angle at 1/2 Power # — ±40 — Deg.
Forward Voltage IF= 100 mA V
F
— — 1.7 V
Reverse Leakage Current VR= 3 V I
R
— — 10 µA
Total Power F5E1
(7)
IF= 100 mA P
O
12.0 — — mW
Total Power F5E2
(7)
IF= 100 mA P
O
9.0 — — mW
Total Power F5E3
(7)
IF= 100 mA P
O
10.5 — — mW
Rise Time 0-90% of output t
r
— 1.5 — µs
Fall Time 100-10% of output t
f
— 1.5 — µs
ELECTRICAL / OPTICAL CHARACTERISTICS
(TA =25°C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300287 4/25/01 1 OF 3 www.fairchildsemi.com
ANODE
(Connected
To Case)
CATHODE
3
1
F5E1/2/3
AlGaAs INFRARED EMITTING DIODE
www.fairchildsemi.com 2 OF 3 4/25/01 DS300287
Figure 1. Power Output vs. Input Current
10
1.0
0.1
, NORMALIZED POWER CURRENT
0.01
O
P
0.001
1
10 1000100
NORMALIZED TO
IF = 100 mA
T
PULSED INPUTS
P
RR = 30 Hz
, INPUT CURRENT (mA)
I
F
= 25
A
= 80 µsec
W
°
C
20
10
8
6
4
2
1
0.8
0.6
0.4
, NORMALIZED POWER OUTPUT
O
P
0.2
0.1
I
= 1 A
F
IF = 100 mA
NORMALIZED TO
IF = 100 mA,
= 80 µsec,
P
W
0-25
= 25
T
A
f = 30 Hz
25
T
A
°
C
, AMBIENT TEMPERATURE (°C)
Figure 4. Typical Radiation Pattern
100
80
60
40
, RELATIVE CURRENT (%)
O
P
20
Figure 2. Power Output vs. Temperature
7550 100 125 150
F5E
4
3
2
, FORWARD VOLTAGE (V)
F
V
1
0-25
IF = 1 A
25
T
A
Figure 5. Output vs. Wavelength
120
100
TYPICAL SPECTRAL
80
RESPONSE OF SLICON
PHOTOSENSORS
60
40
Figure 3. Forward Voltage vs. Temperature
RELATIVE OUTPUT (%)
20
IF = 100 mA
°
C
= 25
T
A
0.5 A
100 mA
10 mA
7550 100 125 150
, AMBIENT TEMPERATURE (°C)
F5E
= 80 µsec
P
W
f = 30 Hz
0
-80 -60 -40 -20
θ - DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
0
10040 60 8020
700
1000800 900
λ - WAVE LENGTH (nm)
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