Fairchild Semiconductor F5D3, F5D2, F5D1 Datasheet

0.040 (1.02)

0.100 (2.54)

0.050 (1.27)

45°

0.040 (1.02)

13

0.030 (0.76)
NOM

0.184 (4.67)

0.209 (5.31)

1.00 (25.4)
MIN

0.255 (6.48)

ANODE
(CASE)

Ø0.020 (0.51) 2X

1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.

2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.

3. RMA flux is recommended.

4. Methanol or isopropyl alcohols are recommended as cleaning
agents.

5. Soldering iron tip 1/16” (1.6mm) minimum from housing.

6. As long as leads are not under any stress or spring tension

7. Total power output, P

O

, is the total power radiated by the device into

a solid angle of 2 ! steradians.

PACKAGE DIMENSIONS

FEATURES

• Good optical to mechanical alignment

• Mechanically and wavelength matched

to the TO-18 series phototransistor

• Hermetically sealed package

• High irradiance level

Parameter Symbol Rating Unit

Operating Temperature T

OPR

-65 to +125 °C

Storage Temperature T

STG

-65 to +150 °C

Soldering Temperature (Iron)

(3,4,5 and 6)

T

SOL-I

240 for 5 sec °C

Soldering Temperature (Flow)

(3,4 and 6)

T

SOL-F

260 for 10 sec °C

Continuous Forward Current I

F

100 mA

Forward Current (pw, 10µs; 100Hz) I

F

3A

Forward Current (pw, 1µs; 200Hz) I

F

10 A

Reverse Voltage V

R

3V

Power Dissipation(TA= 25°C)

(1)

P

D

170 mW

Power Dissipation(TC= 25°C)

(2)

P

D

1.3 W

ABSOLUTE MAXIMUM RATINGS

(TA= 25°C unless otherwise specified)

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.

F5D1/2/3

AlGaAs INFRARED EMITTING DIODE

DESCRIPTION

• The F5D series is a 880 nm LED in a
narrow angle, TO-46 package.

SCHEMATIC

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Emission Wavelength IF= 100 mA "

P

— 880 — nm
Emission Angle at 1/2 Power IF= 100 mA # — ±8 — Deg.
Forward Voltage IF= 100 mA V

F

— — 1.7 V
Reverse Leakage Current VR= 3 V I

R

— — 10 µA
Total Power F5D1

(7)

IF= 100 mA P

O

12.0 — — mW

Total Power F5D2

(7)

IF= 100 mA P

O

9.0 — — mW

Total Power F5D3

(7)

IF= 100 mA P

O

10.5 — — mW

Rise Time 0-90% of output t

r

— 1.5 — µs
Fall Time 100-10% of output t

f

— 1.5 — µs

ELECTRICAL / OPTICAL CHARACTERISTICS

(TA =25°C) (All measurements made under pulse conditions)



2001 Fairchild Semiconductor Corporation

DS300286 4/24/01 1 OF 3 www.fairchildsemi.com

ANODE

(Connected

To Case)

CATHODE

3

1

www.fairchildsemi.com 2 OF 3 4/24/01 DS300286

F5D1/2/3

AlGaAs INFRARED EMITTING DIODE

Figure 1. Power Output vs. Input Current

10

1.0

0.1

NORMALIZED POWER OUTPUT

0.01

,

O

P

0.001
1

10 100 1000

, INPUT CURRENT (mA)

I

F

Figure 3. Forward Voltage vs. Temperature

4

I

= 1 A

3

2

FORWARD VOLTAGE (volts)

,

F

V

F

= 0.5 A

I

F

IF = 100 mA

IF = 10 mA

NORMALIZED TO

IF = 100 mA

°

C

= 25

T

A

PULSED INPUTS

P

= 80 µsec

W

RR

= 30 Hz

PW = 80 µsec

F = 30 Hz

20
10

8
6

4

2

1

0.8

0.6

0.4

NORMALIZED POWER OUTPUTP

,

O

P

0.2

0.1

-25

IF = 1 A

IF = 100 mA

NORMALIZED TO

IF = 100 mA,
P

= 80 µsec,

W

0 25 50 150

Figure 4. Typical Radiation Pattern

100

80

60

40

RELATIVE OUTPUT (%)

,

O

20

Figure 2. Power Output vs. Temperature

°

C

T

= 25

A

f = 30 Hz

75 100 125,

, AMBIENT TEMPERATURE (

T

A

F5D

°C)

1

-25 25

0 100 150125

T

Figure 5. Output vs. Input with L14G Detector

100

IF

10

1.0

OUTPUT CURRENT (mA)

,

0.1

L

I

0.01
10

L14G

7550

, AMBIENT TEMPERATURE (

A

I

L

5V

F5D1

100 1000

I

, INPUT CURRENT (mA)

F

°C)

TYPICAL OUPUTS
AT A DISTANCE OF
10 CM PULSED
INPUTS,

P

= 80 µsec

W

RR

= 30 Hz

0

-80 -60 40 10060 8020-20 0

-40

θ, DISPLACEMENT FROM OPTICAL AXIS (DEGREES

Figure 6. Output vs. Wavelength

120

100

80

TYPICAL SPECTRAL
RESPONSE OF SILICON
PHOTOSENSORS

60

40

RELATIVE OUTPUT (%)

,

O

P

20

700 800 900 1000

IF = 100 mA

TA = 25

F5D

°C

λ, WAVE LENGTH (nm)

)