Fairchild Semiconductor ES3A, ES3D, ES3C, ES3B Datasheet

ES3A - ES3D

ES3A - ES3D

Discrete POWER & Signal

Technologies

Features

• For surface mount applications.

•Glass passivated junction.

0.124 (3.150)

0.108 (2.743)

0.280 (7.112)

0.260 (6.604)

2

1

0.245 (6.223)

0.220 (5.588)

•Low profile package.

0.320 (8.128)

•Easy pick and place.

• Built-in strain relief.

•Superfast recovery times for

high efficiency.

SMC/DO-214AB

COLOR BAND DENOTES CATHODE

0.060 (1.524)

0.030 (0.762)

0.305 (7.747)

0.008 (0.203)

0.004 (0.102)

0.103 (2.616)

0.079 (2.007)

0.012 (0.305)

0.006 (0.152)

3.0 Ampere Superfast Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.

Average Rectified Current

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient** 47
Thermal Resistance, Junction to Lead** 12
Storage Temperature Range -50 to +150
Operating Junction Temperature -50 to +150

= 25°C unless otherwise noted

A

= 75°C

A

3.0 A

100 A

2.66

21.28

mW/°C

W

°C/W
°C/W

°C

C

°

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

3A 3B 3C 3D

Peak Repetitive Reverse Voltage 50 100 150 200 V
Maximum RMS Voltage 35 70 105 140 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C
T

= 100°C

A

Maximum Reverse Recovery Time

I

= 0.5 A, IR = 1.0 A, I

F

RR

= 0.25 A

Maximum Forward Voltage @ 3.0 A 0.90 V
Typical Junction Capacitance

V

= 4.0 V, f = 1.0 MHz

R

1999 Fairchild Semiconductor Corporation

50 100 150 200 V

10

500

20 nS

45 pF

A

µ

A

µ

ES3A-ES3D, Rev. A

T ypical Characteristics

ES3A - ES3D

Forward Current Derating Curve

3.5

3

2.5

2

SINGLE PHASE
HALF WAVE

1.5

60HZ
RESISTIVE OR

1

INDUCTIVE LOAD
.375" (9.0mm) LEAD

FORWARD CURRE NT (A)

0.5

LENGTHS

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE ( C)

º

Non-Repetitive Surge Current

200

100

50

10

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CY CLES AT 60 Hz

Forward Characteristics

100

10

1

0.1

FORWARD CURRENT (A)

0.01

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

º

T = 25 C

A

Pulse Width = 300µs
2% Duty Cycle

FORWARD VOLTAGE (V)

Reverse Characteristics

1000

T = 100 C

º

µ

100

10

1

REVERSE CURRENT ( A)

0.1
0 20406080100120140

PERCENT OF RA TE D PEA K REVER SE VO LT AG E (%)

A

º

T = 75 C

A

º

T = 25 C

A

100

90
80
70
60
50
40
30

CAPACITANCE (p F )

20
10

0

0.1 0.5 1 5 10 20 50 100 500

50

Ω

NONINDUCTIVE

50V
(approx)

Ω

50
NONINDUCTIVE

NOTES:

1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.

2. Rise time = 10 ns max; Source impedance = 50 ohms.

Ω

50
NONINDUCTIVE

DUT

Pulse
Generator
(Note 2)

OSCILLOSCOPE
(Note 1)

(-)

(+)

Reverse Recovery Time Characterstic and Test Circuit Diagram

Junction Capacitance

REVERSE VOLTAGE (V)

-0.25A

+0.5A

trr

0

-1.0A

1.0cm SET TIME BASE FOR
5/ 10 ns/ cm

ES3A-ES3D, Rev. A