Fairchild Semiconductor ES2A, ES2B, ES2C, ES2D Datasheet

ES2A - ES2D

ES2A - ES2D

Discrete POWER & Signal

Technologies

Features

• For surface mount applications.

•Glass passivated junction.

0.083 (2.108)

0.075 (1.905

0.185 (4.699)

0.160 (4.064)

)

2

1

0.155 (3.937)

0.130 (3.302)

•Low profile package.

•Easy pick and place.

• Built-in strain relief.

•Superfast recovery times for

high efficiency.

SMB/DO-214AA

COLOR BAND DENOTES CATHODE

0.050 (1.270)

0.030 (0.762)

0.220 (5.588)

0.200 (5.080)

0.008 (0.203)

0.004 (0.102)

0.096 (2.438)

0.083 (2.108)

0.012 (0.305)

0.006 (0.152)

2.0 Ampere Superfast Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.

Average Rectified Current

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient** 75
Thermal Resistance, Junction to Lead** 20
Storage Temperature Range -50 to +150
Operating Junction Temperature -50 to +150

= 25°C unless otherwise noted

A

= 110°C

A

2.0 A

50 A

1.66

13.3

mW/°C

W

°C/W
°C/W

°C

C

°

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

2A 2B 2C 2D

Peak Repetitive Reverse Voltage 50 100 150 200 V
Maximum RMS Voltage 35 70 105 140 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current

@ rated V

R TA

= 25°C
= 100°C

T

A

Maximum Reverse Recovery Time

I

= 0.5 A, IR = 1.0 A, I

F

= 0.25 A

RR

Maximum Forward Voltage @ 2.0 A 0.90 V
Typical Junction Capacitance

V

= 4.0 V, f = 1.0 MHz

R

1999 Fairchild Semiconductor Corporation

50 100 150 200 V

10

350

20 nS

18 pF

µA
µA

ES2A-ES2D, Rev. A

T ypical Characteristics

ES2A - ES2D

Forward Current Derating Curve

2.5

2

1.5

SINGLE PHASE
HALF WAVE

1

60HZ
RESISTIVE OR
INDUCTIVE LOAD

0.5

.375" (9.0mm) LEAD

FORWARD CURRENT (A )

LENGTHS

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE ( C)

º

Non-Repetitive Surge Current

60

50

40

30

20

10

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYC LES AT 60Hz

Forward Characteristics

50

10

1

0.1

º

T = 25 C

FORWARD CURRENT (A)

0.01

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

A

Pulse Width = 300µs
2% Duty Cycle

FORWARD VOLTAGE (V)

Reverse Characteristics

1000

T = 100 C

º

µ

100

10

1

REVERSE CURRENT ( A)

0.1
0 20406080100120140

PERCENT OF RA TE D PEA K REVER SE VO LT AG E (%)

A

T = 75 C

º

A

º

T = 25 C

A

60

50

40

30

20

CAPACITANCE (pF)

10

0

0.1 0.5 1 5 10 20 50 100 500

50

Ω

NONINDUCTIVE

50V
(approx)

Ω

50
NONINDUCTIVE

NOTES:

1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.

2. Rise time = 10 ns max; Source impedance = 50 ohms.

Ω

50
NONINDUCTIVE

DUT

Pulse
Generator
(Note 2)

OSCILLOSCOPE
(Note 1)

(-)

(+)

Reverse Recovery Time Characterstic and Test Circuit Diagram

Junction Capacitance

REVERSE VOLTAGE (V)

+0.5A

trr

0

-0.25A

-1.0A

1.0cm SET TIME BASE FOR
5/ 10 ns/ cm

ES2A-ES2D, Rev. A