Fairchild Semiconductor EGF1D, EGF1C, EGF1B, EGF1A Datasheet
EGF1A - EGF1D
Features
Low forward voltage drop.
•
0.062 (1.575)
0.055 (1.397)
• Low profile package.
• Fast switching for high efficiency.
3.93
3.73
1.67
1.47
+
2.38
2.18
5.49
5.29
Minimum Recommende d
Land Pattern
SMA/DO-214AC
COLOR BAND DENOTES CA THODE
0.060 (1.524)
0.030 (0.762)
1.0 Ampere High Efficiency Glass Passivated Rectifier
0.181 (4.597)
0.157 (3.988)
2
0.208 (5.283)
0.188 (4.775)
0.008 (0.203)
0.002 (0.051)
0.114 (2.896)
1
0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
EGF1A - EGF1D
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JC
T
stg
T
J
Average Rectified Current
@ T
= 100°C
L
1.0 A
Peak Forward Surge Current
8.3 ms single half-sine-wave
30 A
Superimposed on rated load (JEDEC method)
Total Dev ice Dissipation
Derate above 25°C
2.0
13
Thermal Resistance, Junction to Ambien t ** 85
Ther mal Resistance, Junction to Case * * 30
Storage Temperature Range -65 to +175
Operating Junction Temperature -65 to +175
W
mW/°C
C/W
°
C/W
°
C
°
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
1A 1B 1C 1D
Peak Repetitive Reverse Voltage 50 100 150 200 V
Maximum RMS Voltage 35 70 105 140 V
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 125°C
T
A
Maximum Forward Voltage @ 1.0 A 1.0 V
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
RR
Typical Junction Capacit ance
V
= 4.0 V, f = 1.0 MHz
R
50 100 150 200 V
10
100
50 ns
15 pF
µ
A
µ
A
1998 Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. B
T ypical Characteristics
EGF1A - EGF1D
Forward Current Derating Curve
1.6
1.4
1.2
1
RESISTIVE OR
0.8
INDUCTIVE LOAD
P.C.B . MO UN T E D
0.6
ON 0 .2 x 0 .2"
(5.0 x 5.0 mm)
0.4
COPP ER PAD AREAS
FORWARD CU RRENT (A)
0.2
0
0 255075100125150175
LEAD TEMPERA T URE ( C)
º
Non-Repetitive Surge Current
40
30
20
10
0
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBER O F CYCLES AT 60Hz
Forward Characteristics
100
T = 25 C
T = 25 C
º
º
J
A
Pulse Width = 30 0µS
2% Duty Cycle
10
1
0.1
FORWARD CU RR ENT (A)
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
FORWARD VOLTAGE (V)
Reverse Characteristics
1000
T = 100 C
º
µ
100
10
1
REVERS E C URRENT ( A)
0.1
0 20406080100120140
PERCENT OF RA TED PEAK REVERSE VO LTAGE (%)
A
T = 25 C
T = 25 C
º
º
J
A
T ypical Junction Capacitance
60
50
40
30
20
10
JUNCT ION CAP ACITANCE (pF)
0
0.1 0.5 1 2 5 10 20 50 100 500
50
Ω
NONINDUCTIVE
50V
(approx)
Ω
50
NONINDUCTIVE
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
Ω
50
NONINDUCTIVE
DUT
OSCILLOSCOPE
(Note 1)
REVERSE VO LTAGE (V)
(-)
Pulse
Generator
(Note 2)
(+)
Reverse Recovery Time Characterstic and Test Circuit Diagram
+0.5A
trr
0
-0.25A
-1.0A
1.0cm SET TIME BASE FOR
5/ 10 ns/ cm
EGF1A-EGF1D, Rev. B
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