Fairchild Semiconductor BZX55C8V2, BZX55C6V8, BZX55C9V1, BZX55C5V6, BZX55C4V7 Datasheet
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Discrete POWER & Signal
Technologies
BZX55C 3V3 - 33 Series Half Watt Zeners
BZX55C 3V3 - BZX55C 33 Series
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Parameter Value Units
Storage Temperature Range -65 to +200
Maximum Junction Operating Temperature + 200
Lead Temperature (1/16” from case for 10 seconds) + 230
Total Device Dissipation
Derate above 25°C
Surge Power** 30 W
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
500
4.0
mW/°C
Electrical Characteristics TA = 25°C unless otherwise noted
V
Device
BZX55C 3V3
BZX55C 3V6
BZX55C 3V9
BZX55C 4V3
BZX55C 4V7
BZX55C 5V1
BZX55C 5V6
BZX55C 6V2
BZX55C 6V8
BZX55C 7V5
BZX55C 8V2
BZX55C 9V1
BZX55C 10
BZX55C 11
BZX55C 12
BZX55C 13
BZX55C 15
BZX55C 16
BZX55C 18
BZX55C 20
BZX55C 22
BZX55C 24
BZX55C 27
BZX55C 30
BZX55C 33
Foward Voltage = 1.0 V Maximum @ I
V
F
Z
(V)
MIN MAX
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28.0
31.0
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.1
23.3
25.6
28.9
32.0
35.0
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
Z
(Ω)
85
85
85
75
60
35
25
10
8.0
7.0
7.0
10
15
20
20
26
30
40
50
55
55
80
80
80
80
I
Z
@
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
= 100 mA for all BZX 55 series
F
ZT
Z
(Ω)
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
ZK
I
ZT
@
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
C
°
C
°
C
°
mW
I
R
R
@@
(µA)
2.0
2.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
Tolerance: C = 5%
DO-35
I
(µA)
T
= 150°C
A
R
40
40
40
20
10
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
T
C
(%/°C)
- 0.060
- 0.055
- 0.050
- 0.040
- 0.020
+0.010
+0.025
+0.032
+0.040
+0.045
+0.048
+0.050
+0.055
+0.060
+0.065
0.070
0.070
0.075
0.075
0.080
0.080
0.080
0.085
0.085
0.085
I
ZM
(mA)
115
105
95
90
85
80
70
64
58
53
47
43
40
36
32
29
27
24
21
20
18
16
14
13
12
ã 1997 Fairchild Semiconductor Corporation
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