Fairchild Semiconductor BAV99 Datasheet
BAV99
321
CONNECTION DIAGRAM
BAV99
Discrete POWER & Signal
Technologies
3
3
A7
2
SOT-23
1
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inverse Voltage 70 V
Average Rectified Current 200 mA
DC For ward Current 600 mA
Recurrent Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150
Operating Junction Temperature 150 °C
12
1.0
2.0
A
A
°C
1997 Fairchild Semiconductor Corporation
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Un i ts
BAV99
P
D
R
θ
JA
Total De vice Dissipati on
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
50 0 05
1N4150
MMBD1201 1205
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symb ol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
V
FM
Br eakdo wn V oltage IR = 100 µA70V
Reverse Current VR = 70 V
= 25 V, TA = 150°C
V
R
VR = 70 V, TA = 150°C
Forward Voltage IF = 1.0 mA
= 10 mA
I
F
IF = 50 mA
= 150 mA
I
F
2.5
30
50
715
855
1.0
1.25
µ
µ
µ
mV
mV
V
V
A
A
A
Diode Capacitance VR = 0, f = 1.0 M Hz 1.5 pF
Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
Ω
= 100
R
Peak Forward Voltage
L
= 10 mA, tr = 20 nS
I
F
6.0 nS
1.75 V
Typical Characteristics
BAV99
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
150
Ta= 25°C
140
130
120
R
R
V
V - REV ER SE VO LTA G E (V )
110
1 2 3 5 10 20 30 50 100
I - REVERSE CUR RENT (uA)
R
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
485
Ta= 25°C
450
400
350
300
250
F
F
V
V - FORWARD VO LTAGE (mV)
225
1 2 3 5 10 20 30 50 100
I - FORWARD CURRENT (uA)
F
I
F
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 10 to 100 V
Ta= 25°C
300
250
200
150
100
50
R
0
I - REVERSE CURRENT (nA)
10 20 30 50 70 100
GENER AL RULE : The Reverse Cu rrent of a diode will appr oximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) D egree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
725
Ta= 25°C
700
650
600
550
500
F
F
V
V - FORWARD VOLTAGE (mV)
450
0.1 0.2 0.3 0.5 1 2 3 5 10
I - FORWARD CURRENT (mA)
F
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