BAV70 / 74
BAV70 / BAV74
Discrete POWER & Signal
Technologies
3
SOT-23
3
A4
2
1
BAV70 A4 BAV74 JA
12
MARKING
CONNECTION DIAGRAMS
3
21
High Conductance Ultra Fast Diode
Sourced from Process 1P. See BAV99 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Workin g Inverse Voltage
Average Rectified Current 200 mA
DC Forward Current 600 mA
Recurren t Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
BAV70
BAV74
70
50
1.0
2.0
V
V
A
A
°
°
C
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BAV70/74
P
D
R
θ
JA
ã 1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistan ce, Junction to Ambient 357
350
2.8
mW
mW/°C
C/W
°
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Q
S
Breakdown Voltage
Reverse Cu rrent
Forward Voltage
BAV70
Diode Capacitance
Reverse Recovery Time
Stored Charge
BAV70
BAV74
BAV70
BAV74
BAV74
BAV70
BAV74
BAV70
BAV74
BAV70
I
= 100 µA
R
I
= 100 µA
R
V
= 25 V, TA = 150°C
R
V
= 70 V
R
V
= 70 V, TA = 150°C
R
V
= 50 V
R
V
= 50 V, TA = 150°C
R
IF = 1.0 mA
I
= 10 mA
F
I
= 50 mA
F
I
= 150 mA
F
I
= 100 mA
F
VR = 0, f = 1.0 MHz
V
= 0, f = 1.0 MHz
R
IF = IR = 10 mA, IRR = 1.0 mA,
R
= 100
Ω
L
I
= IR = 10 mA, IRR = 1.0 mA,
F
R
= 100
Ω
L
70
50
60
5.0
100
100
100
715
855
1.0
1.25
1.0
1.5
2.0
6.0
4.0
V
V
nA
mV
mV
V
V
V
pF
pF
nS
nS
IF = 10 mA 45 pC
A
A
BAV70 / BAV74