Fairchild Semiconductor BAV23S Datasheet
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
BAV23S
HIGH VOLTAGE GENERAL PURPOSE DIODE
PD . . . .350 mW @ TA = 25 Deg C
BV . . . .250 V (MIN) @ IR = 100 uA
TRR . . . 50 nS @ IF=IR = 30 mA IRR = 3.0 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature 150 Degrees C
Operating Junction Temperature 150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C 350 mW
Derating Factor per Degree C 2.8 mW
VOLTAGES & CURRENTS
V
RRM
V
RRM
V
RWM
V
RWM
IO Average Rectified Current 200 mA
IF DC Forward Current 400 mA
if Recurrent Peak Forward Current 700 mA
if (surge) Peak Forward Surge Current
Repetitive Peak Reverse Voltage 250 V
(Single Device)
Repetitive Peak Reverse Voltage 500 V
(Series Connection)
Continuous Peak Reverse Voltage 200 V
(Single Device)
Continuous Peak Reverse Voltage 400 V
(Series Connection)
Pulse Width = 1.0 microsec 9.0 A
Pulse Width = 100 microsec 3.0 A
Pulse Width = 10 millisec 1.7 A
3
L30
1 2
PACKAGE
TO-236AB (Low)
(SOT-23)
CONNECTION DIAGRAMS
3
21
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BV Breakdown Voltage 250 V IR = 100 uA
IR Reverse Current (single device) 100 nA VR = 200 V
100 uA VR = 200 V TA = +150 Deg C
Reverse Current (series connection) 100 nA VR = 400 V
100 uA VR = 400 V TA = +150 Deg C
VF Forward Voltage (single device) 1.00 V IF = 100 mA
1.25 V IF = 200 mA
Forward Voltage (series connection) 2.00 V IF = 100 mA
2.50 V IF = 200 mA
TRR Reverse Recovery Time 50 nS IF = IR = 30 mA
IRR = 3.0 mA RL = 100 ohms
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings give a maximum junction temperature of 150 degrees C and junction-to-ambient thermal resistance of 357 degrees C
per Watt. (Derating factor of 2.8 milliwatts per degree C)
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
0.019 (0.483)
0.015 (0.381)
3
0.098 (2.489)
0.083 (2.108)
0.040 (1.016)
0.035 (0.889)
3 CHARACTERS MAX
1
0.080 (2.032)
0.070 (1.778)
0.120 (3.048)
0.110 (2.794)
0.055 (1.397)
0.047 (1.194)
2
LOW PROFILE 0.041 (1.041)
0.024 (0.810)
0.018 (0.457)
(49) 0.035 (0.889)
LOW PROFILE 0.0040 (0.102)
(49) 0.0005 (0.013)
TO-236AB (LOW PROFILE)
0.0059 (0.150)
0.0035 (0.089)
SOT-23
22-August-1994
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