DESCRIPTION
The 4N39 and 4N40 have a gallium-arsenide infrared
emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package.
PHOTO SCR OPTOCOUPLERS
4N39 4N40
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
FEATURES
• 10 A, T2L compatible, solid state relay
• 25 W logic indicator lamp driver
• 400 V symmetrical transistor coupler
• Underwriters Laboratory (UL) recognized File #E90700
SCHEMATIC
Parameter Symbol Device Value Units
TOTAL DEVICE
T
STG
All -55 to +150 °C
*Storage Temperature
*Operating Temperature T
OPR
All -55 to +100 °C
*Lead Solder Temperature T
SOL
All 260 for 10 sec °C
*Total Device Power Dissipation (-55°C to 50 °C)
P
D
All
450 mW
Derate above 50°C 9.0 mW/°C
EMITTER
I
F
All 60 mA
*Continuous Forward Current
*Reverse Voltage V
R
All 6 V
*Forward Current - Peak (300 µs, 2% Duty Cycle) IF(pk) All 1.0 A
*LED Power Dissipation (-55°C to 50 °C)
P
D
All
100 mW
Derate above 50°C 2.0 mW/°C
DETECTOR
*Off-State And Reverse Voltage
4N39 200 V
4N40 400 V
*Peak Reverse Gate Voltage 6V
*Direct On-State Current 300 mA
*Surge On-State Current (100 µs) 10 A
*Peak Gate Current 10 mA
*Detector Power Dissipation (-55°C to 50°C)
P
D
All
400 mW
Derate above 50°C 8.0 mW/°C
2001 Fairchild Semiconductor Corporation
DS300381 2/27/01 1 OF 8 www.fairchildsemi.com
Note
* Indicates JEDEC Registered Data
** Typical values at T
A
= 25°C
ANODE
1
GATE
6
CATHODE
2
3
N/C
ANODE
5
4
CATHODE
Parameter Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
Input Forward Voltage I
F
= 10 mA
V
F
All
1.1 1.5 V
Reverse Leakage Current VR= 3 V I
R
All 10 µA
Capacitance VF= 0 V, f = 1.0 MHz C
J
All 50 pF
DETECTOR
Peak Off-State Voltage R
GK
= 10 kΩ, TA=100 °C V
DM
4N39 200
V
4N40 400
Peak Reverse Voltage TA=100 °C V
RM
4N39 200
V
4N40 400
On-State Voltage IT= 300 mA V
T
All 1.3 V
Off-State Current
V
DM
= 200 V,
T
A
= 100 °C,
I
DM
4N39 50
µA
I
F
= 0 mA, R
GK
= 10 kΩ
4N40 150
Reverse Current VR= 200 V , TA=100 °C, IF= 0 mA I
R
4N39 50
µA
4N40 150
Holding Current V
Fx
= 50V, R
GK
= 27 k
Ω
I
H
All 1.0 mA
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TA= 25°CUnless otherwise specified.)
Characteristic Test Conditions Symbol Min Typ** Max Units
*Input-Output Isolation Voltage ( I
I-0
≤ 1
µA, Vrms,
t = 1 min.) V
ISO
5300 Vac(rms)
*Isolation Resistance (V
I-O
= 500 VDC) R
ISO
10
11
!
Isolation Capacitance (V
I-O
= ∅, f = 1 MHz) C
ISO
0.8 pf
ISOLATION CHARACTERISTICS
Characteristics Test Conditions Symbol Device Min Typ** Max Units
*Input Current to Trigger
V
AK
= 50 V , RGK= 10 kΩ
I
FT
4N39 30
mA
V
AK
= 100 V , RGK= 27 kΩ
4N40 14
*Turn-On Time
V
AK
= 50 V, IF= 30 mA
t
on
ALL 50 µA
R
GK
= 10 kΩ, RL = 200 Ω
Package Capacitance f = 1 MHz
C
I-O
ALL 2 pF
(input to output) Input to Output Voltage = 0
Coupled dv/dt, input to output
dV/dt
ALL 500 V/µS
(figure 13)
TRANSFER CHARACTERISTICS
(TA= 25°C Unless otherwise specified.)
PHOTO SCR OPTOCOUPLERS
4N39 4N40
www.fairchildsemi.com 2 OF 8 2/27/01 DS300381
Note
* Indicates JEDEC Registered Data
** Typical values at TA= 25°C
PHOTO SCR OPTOCOUPLERS
4N39 4N40
DS300381 2/27/01 3 OF 8 www.fairchildsemi.com
Figure 1. Input Current To Trigger vs. Anode-Cathode Voltage
50
10
5
1
.5
- NORMALIZED INPUT CURRENT TO TRIGGER
FT
I
.1
NORMALIZED TO
RGK = 300Ω
1K
10K
27K
56K
51 10 50 100 200 400
V
- ANODE TO CATHODE VOLTAGE (VOLTS)
AK
V
AK
R
GK
T
A
= 50V
= 10K
= 25˚C
Figure 3. Input Current To Trigger Distribution vs. Temperature
10
8
6
4
.8
.6
.4
FT - NORMALIZED INPUT CURRENT TO TRIGGER
I
.2
2
90 TH PERCENTILE
1
10 TH PERCENTILE
NORMALIZED TO
V
AK
R
GK
= 25˚C
T
A
= 50V
= 10K
Figure 2. Input Current To Trigger vs. Temperature
12
10
RGK = 300Ω
8
6
4
1K
2
1
.8
.6
.4
NORMALIZED INPUT CURRENT TO TRIGGER
-
.2
FT
I
.1
10K
27K
56K
NORMALIZED TO
V
AK
R
GK
T
A
-40-60 -20 0 20 40 60 80 100 120
- AMBIENT TEMPERATURE (˚C)
T
A
Figure 4. Input Current To Trigger vs. Pluse Width
100
40
20
10
8
6
4
2
1
.8
.6
.4
- NORMALIZED INPUT CURRENT TO TRIGGER
FT
.2
I
.1
21486 10 20 40 60 100 200 400 1000
PULSE WIDTH (MICRO SECONDS)
NORMALIZED TO
= 50V
= 10K
= 25˚C
V
AK
R
GK
= 25˚C
T
A
= 300Ω
R
GK
1K
10K
27K
56K
= 50V
= 10K
.1
-40 -20 0 20 40 60 80 100
Figure 6. Input Characteristics I
F
vs. V
F
TA - AMBIENT TEMPERATURE (˚C)
1000
24
Figure 5. Turn-On Time vs. Input Current
100
22
20
18
16
14
12
10
8
6
4
- TURN ON TIME (MICROSECONDS)
on
2
t
V
= 50V
AK
= td + I
t
on
r
R
= 1K
GK
10K
56K
tr ≈ 1µS
2010 30 5040 60 70 80 90 100
- INPUT CURRENT (MILLIAMPERES)
I
F
10
1
0
- FORWARD CURRENT (MILLIAMPERES)
F
I
.01
.001
0.5 1.0 2.0 3.0
- FORWARD VOLTAGE (VOLTS)
V
AK