Fairchild Semiconductor 2N6520 Datasheet
2N6520
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
• Complement to 2N6517
PNP Epitaxial Silicon Transistor
= -350V
CEO
(max)=625mW
C
1
TO-92
1. Emitter 2. Base 3. Collector
2N6520
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector-Base Voltage -350 V
Collector-Emitter Voltage -350 V
Emitter-Base Voltage -5 V
Collector Current -500 mA
Base Current -250 mA
Collector Power Dissipation 0.625 W
Derate above 25 5 mW/°C
T
J
T
STG
Electrical Characteristics
Junction Temperature 50 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector -Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
BE
(on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V
V
BE
f
T
C
ob
C
EB
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -350 V
* Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -350 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -250V, IE=0 -50 nA
Emitter Cut-off Current VEB= -4V, IC=0 -50 nA
* DC Current Gain VCE= -10V, IC= -1mA
= -10V, IC= -10mA
V
CE
= -10V, IC= -30mA
V
CE
= -10V, IC= -50mA
V
CE
= -10V, IC= -100mA
V
CE
20
30
30
20
15
200
200
-0.30
= -20mA, IB= -2mA
I
C
I
= -30mA, IB= -3mA
C
= -50mA, IB= -5mA
I
C
-0.35
-0.50
-1
-0.75
= -20mA, IB= -2mA
I
C
= -30mA, IB= -3mA
I
C
-0.85
-0.90
* Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz 40 200 MHz
Output Capaci tance VCB= -20V, IE=0, f=1MHz 6 pF
Emitter-Base Capacitance VEB= -0.5V, IC=0, f=1MHz 100 pF
Turn On Time VBE (off)= -2V, VCC= -100V
= -50mA, IB1= -10mA
I
C
Turn Off Time VCC= -100V, IC= -50mA
= -10mA
I
B1=IB2
200 ns
3.5 ns
V
V
V
V
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Typical Characteristics
2N6520
1000
VCE = -20V
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000 - 10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
t[ns] ,TIME
tD @ VBE(off)=-2.0V
t
R
VCE(off) = -100V
IC/IB= 5
TJ=25oC
-10000
IC = 10 I
B
-1000
-100
(sat)[mV], S A TURA T I ON VO LTAG E
CE
(sat), V
BE
V
-10
-1 -10 -100 -1000 -10000
VCE(sat)
VBE(sat)
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
t
1000
t[ns] ,TIME
100
STG
t
F
VCE(off) = -100V
IC/IB= 5
I
= I
B1
B2
TJ=25oC
10
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. Turn-On Time Figure 4. Turn-Off Time
3.0
2.5
IC/IB = 10
2.0
1.5
1.0
0.5
R
for V
!
VB
R
θ
VC
BE
for VCE(sat)
0.0
-0.5
-1.0
C], THERMAL COEFFICIENTS
o
-1.5
-2.0
R[mV/
-2.5
-1 -10 -100
-55oC to 125oC
-55oC to 125oC
IC[mA], COLLECTOR CURRENT
-55oC to 25oC
100
f=1MHz
10
[pF], CAPACITANCE
ob
[pF], C
ib
C
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
C
ib
C
ob
Figure 5. Temperature Coefficients Figure 6. Capacitance
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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