Fairchild Semiconductor 2N6519 Datasheet
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
= -300V
CEO
(max)=625mW
C
2N6519
2N6519
TO-92
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
1
1. Emitter 2. Base 3. Collector
Symbol Parameter Value Units
V
V
V
I
I
P
CBO
CEO
EBO
C
B
C
Collector-Base Voltage -300 V
Collector-Emitter Voltage -300 V
Emitter-Base Voltage -5 V
Collector Current -500 mA
Base Current -250 mA
Collector Power Dissipation 625 W
Derate above 25°C5mW/°C
T
J
T
STG
• Refer to 2N6520 for graphs
Electrical Characteristics
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector -Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
BE
(on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V
V
BE
f
T
C
ob
C
EB
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -300 V
* Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -300 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -200V, IE=0 -50 nA
Emitter Cut-off Current VEB= -4V, IC=0 -50 nA
* DC Current Gain VCE= -10V, IC= -1mA
V
= -10V, IC= -10mA
CE
= -10V, IC= -30mA
V
CE
= -10V, IC= -50mA
V
CE
= -10V, IC= -100mA
V
CE
30
45
45
40
20
270
200
-0.30
= -20mA, IB= -2mA
I
C
= -30mA, IB= -3mA
I
C
= -50mA, IB= -5mA
I
C
-0.35
-0.50
-1
-0.75
= -20mA, IB= -2mA
I
C
I
= -30mA, IB= -3mA
C
-0.85
-0.90
* Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz 40 200 MHz
Output Capaci tance VCB= -20V, IE=0, f=1MHz 6 pF
Emitter-Base Capacitance VEB= -0.5V, IC=0, f=1MHz 100 pF
Turn On Time VBE (off)= -2V, VCC= -100V
= -50mA, IB1= -10mA
I
C
Turn Off Time VCC= -100V, IC= -50mA
=10mA
I
B1=IB2
200 ns
3.5 ns
V
V
V
V
V
V
V
©2003 Fairchild Semiconductor Corporation Rev. B2, Jnauary 2003
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
2N6519
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
Rev. B2, Jnauary 2003©2003 Fairchild Semiconductor Corporation
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