Fairchild Semiconductor 2N6517 Datasheet

2N6517

High Voltage Transistor

• Collector-Emitter Voltage: V

• Collector Dissipation: P

• Complement to 2N6520

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

=350V

CEO

(max)=625mW

C

2N6517

1

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

T

STG

• Refer to 2N6515 for graphs

Collector-Base Voltage 350 V
Collector-Emitter Voltage 350 V
Emitter-Base Voltage 6 V
Collector Current 500 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Tes t Condition Min. Typ. Max. Units

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

EBO

h

FE

V

(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA

CE

(sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA

V

BE

C

ob

f

T

V

(on) Base Emitter On Voltage IC=100mA, VCE=10V 2 V

BE

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

* Collector-Emitter Breakdo wn Voltage IC=1mA, IB=0 350 V
Collector-Base Breakdown Voltage IC=100µA, IE=0 350 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCB=250V, IE=0 50 nA
Emitter Cut-off Current VEB=5V, IC=0 50 nA
* DC Current Gain IC=1mA, VCE=10V

Output Capacitance VCB=20V, IE=0, f=1MHz 6 pF
* Current Gain Bandwidth Product IC=10mA, VCE=20V,

Ta=25°C unless otherwise noted

Ta=25°C unless otherwise noted

=10mA, VCE=10V

I

C

=30mA, VCE=10V

I

C

I

=50mA, VCE=10V

C

=100mA, VCE=10V

I

C

=20mA, IB=2mA

I

C

I

=30mA, IB=3mA

C

=50mA, IB=5mA

I

C

I

=20mA, IB=2mA

C

=30mA, IB=3mA

I

C

f=20MHz

20
30
30
20

200
200

15

0.3

0.35

0.5
1

0.75

0.85

0.9

40 200 MHz

V
V
V
V

V
V
V

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002

Package Dimensions

0.46

±0.10

4.58

+0.25
–0.15

2N6517

TO-92

±0.20

4.58

±0.40

1.27TYP

[1.27

±0.20

3.86MAX

±0.10

1.02

+0.10

–0.05

0.38

14.47

1.27TYP

]

3.60

±0.20

[1.27

±0.20

]

0.38

+0.10
–0.05

(0.25)

(R2.29)

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002