Fairchild Semiconductor 2N6426 Datasheet
2N6426
2N6426
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 40 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 12 V
Collector Current - Continuous 1.2 A
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
2N6426
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN Darlington Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 040V
C oll ec t or -Base Breakd ow n Volt age IC = 100 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
12 V
Colle c tor Cu tof f Cu r ren t VCB = 30 V, IE = 0 50 nA
Colle c tor Cu tof f Cu r ren t VCE = 25 V, IB = 0 1.0
µ
A
Emitter Cutoff Current VEB = 10 V, IC = 0 50 nA
DC Cu r ren t Gain VCE = 5.0 V, IC = 10 mA
= 5.0 V, IC = 100 mA
V
CE
= 5.0 V, IC = 500 mA
V
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 0.5 mA
)
Base- Emi tt er Saturation Voltage IC = 500 mA, IB = 0.5 mA 2.0 V
)
CE
= 500 mA, IB = 0.5 mA
I
C
20,0 00
30,0 00
20,0 00
200, 000
300, 000
200, 000
1.2
1.5
V
V
Base- Emi tt er O n V oltage IC = 50 mA, VCE = 5.0 V 1.75 V
2N6426
SMALL SIGNAL CHARACTERISTICS
C
ob
C
ib
h
fe
h
ie
h
oe
NF Noise Figure IC = 1.0 mA, VCE = 5.0 V,
Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 7.0 pF
Input Capacitance VEB = 1.0 V, IC = 0, f = 1.0 MHz 15 pF
Small-Signal Current Gain IC = 10 mA, VCE = 5.0 V,
f = 1. 0 kHz
Input Impedance IC = 10 mA, VCE = 5.0 V, 100 2,000 kΩ
Output Admittance f = 1.0 kHz 1,000
R
= 100 kΩ,
s
f = 1 0 k Hz to 15 .7 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
20,000
µmho
10 dB
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