Fairchild Semiconductor 2N6076 Datasheet
2N6076
DISCRETE POWER & SIGNAL
TECHNOLOGIES
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min)
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature -55 Degrees C to 150 Degrees C
Operating Junction Temperature 150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C 625 mW
VOLTAGES & CURRENT
VCEO Collector to Emitter 25 V
VCBO Collector to Base 25 V
VEBO Emitter to Base 5 V
IC Collector Current 500 mA
1 2 3
B C E
1 2 3
0.175 - 0.185
(4.450 - 4.700)
LOGOXYY
2N
6076
0.135 - 0.145
(3.429 - 3.683)
0.175 - 0.185
(4.450 - 4.700)
0.500
(12.70)
0.016 - 0.021
(0.410- 0.533)
0.045 - 0.055
(1.143- 1.397)
0.095 - 0.105
(2.413 - 2.667)
SEATING
PLANE
MIN
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVCBO Collector to Base Voltage 25 V IC = 100 uA
BVCEO Collector to Emitter Voltage 25 V IC = 10 mA
BVEBO Emitter to Base Voltage 5 V IE = 10 uA
ICBO Collector Cutoff Current 100 nA VCB = 25 V
10 uA VCB = 25 V , T=+100°C
ICES Collector Cutoff Current 100 nA VCE = 25 V
IEBO Emitter Cutoff Current 100 uA VEB = 3.0 V
hFE DC Current Gain 100 500 VCE = 10 V IC = 10 mA
VCE(sat) Collector-Emitter Saturation Voltage 0.25 V IC = 10mA IB = 1.0mA
VBE(sat) Base-Emitter Saturation Voltage 0.8 V IC = 10mA IB = 1.0mA
VBE(on) Base -Emitter On Voltage 0.5 1.2 V VCE = 10 V IC = 10mA
1998 Fairchild Semiconductor Corporation
2n6076.ppt6894 revA
DISCRETE POWER & SIGNAL
TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
ELECTRICAL CHARACTERISTICS Con’t (25 Degrees C Ambient Temperature unless otherwise stated)
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
Ccb Output Capacitance 1 13 pF VCB = 10 V, f = 1 MHz
hfe Small Signal Current Gain 100 750 VCE = 10 V, IC=10 mA, f =1KHz
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. These ratings are based on a maximum junction temperature of 150 degrees C.
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