Fairchild Semiconductor 2N5961 Datasheet
2N5961
2N5961
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA. Sourced
from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Val60ue Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 60 V
Collector-Base Voltage 60 V
Em i t ter - Bas e V olt ag e 8. 0 V
Collector Current - Continuous 100 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Un i ts
2N5961
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °C/W
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
BE(on)
Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0 60 V
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
8.0 V
Collector Cutoff Current VCB = 45 V, IE = 0
= 45 V, IE = 0, TA = 65 °C
V
CB
Emit ter Cutoff C u rre nt VEB = 5.0 V, IC = 0 1.0 nA
DC Cu r re n t Ga in
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA
)
= 5.0 V, IC = 10 µA
V
CE
V
= 5.0 V, IC = 100 µA
CE
= 5.0 V, IC = 1.0 mA
V
CE
= 5.0 V, IC = 10 mA
V
CE
= 10 mA, IB =1.0 mA
I
C
100
120
135
150 700
Base- Emi tt er O n V oltage VCE = 5.0 V, IC = 1.0 mA 0.5 0.7 V
2.0
50
0.2
0.2
nA
nA
V
V
2N5961
SMALL SIGNAL CHARACTERISTICS
C
cb
C
eb
h
fe
NF Noise Figure VCE = 5.0 V, IC = 10 µA,
Collector-Base Capacitance VCB = 5.0 V, f = 1.0 MHz 4.0 pF
Em i t ter - Bas e C apac it an ce VEB = 0.5 V, f = 1.0 MHz 6.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 5.0 V,
f = 1. 0 kHz
= 10 mA, VCE = 5.0 V,
I
C
f = 10 0 M Hz
RS = 10 kΩ, f = 1.0 kHz,
BW = 400 Hz
VCE = 5.0 V, IC = 10 µA,
= 10 kΩ, f = 10 Hz - 10 kHz
R
S
= 15.7 kHz
B
W
= 5.0 V, IC = 100 µA,
V
CE
= 1.0 kΩ, f = 1.0 kHz
R
S
= 400 Hz
B
W
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
150
1.0
1000
3.0
3.0
6.0
dB
dB
dB
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