Fairchild Semiconductor 2N5952 Datasheet
2N5952
N-Channel RF Ampifier
• This device is designed primarily for electronic switching applications
such as low on resistance analog switching.
• Sourced from process 50.
2N5952
1
TO-92
1. Gate 2. Source 3. Drain
Absolute Maximum Ratings *
TC=25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
T
, T
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Drain-Gate Voltage 30 V
Gate-Source Voltage -30 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 ~ +150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage VDS = 0, IG = -1.0µA-30 V
Gate Reverse Current VGS = -15V, VDS = 0 -1.0 nA
Gate-Source Cutoff Voltage VDS = 15V, ID = 100nA -1.3 -3.5 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 4.0 8.0 mA
Small Signal Characteristics
g
fs
g
os
C
iss
C
rss
NF Noise Figure V
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 1.0%
Forward Transfer Conductance VDS = 15V, VGS = 0, f = 1.0kHz 2000 6500 µmhos
Output Conductance VDS = 15V, VGS = 0, f = 100MHz 75 µmhos
Input Capacitance VDS = 15V, VGS = 0, f = 1.0MHz 6.0 pF
Reverse Transfer Capacitance VDS = 15V, VGS = 0, f = 1.0MHz 2.0 pF
= 15V, RG = 1.0kΩ,
DS
f = 1.0kHz
2.0 dB
Thermal Characteristics
TA=25°C unless otherwise noted
Symbol Parameter Max. Units
P
D
R
θJC
R
θJA
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
Total Device Dissipation
Derate above 25°C
350
2.8
mW
mW/°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357 °C/W
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
2N5952
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
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