Fairchild Semiconductor 2N5769 Datasheet
2N5769
2N5769
Discrete POWER & Signal
Technologies
C
B
E
TO-92
NPN Switching Transistor
This device is designed for high speed saturated switching
applications at currents to 100 mA. Sourced from Process 21.
See PN2369A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 15 V
Collector-Base Voltage 40 V
Em i t ter - Bas e V olt ag e 4. 5 V
Collector Current - Continuous 200 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteri st ic Max Units
2N5769
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
NPN Switching Transistor
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
(BR)CES
I
CBO
I
CES
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 015V
C oll ec t or -Base Breakd ow n Volt age IC = 10 µA, IE = 0 40 V
Em i t ter - Bas e B r e akdown Vol tage
= 10 µA, IC = 0
I
E
4.5 V
Collector-Emitter Breakdown Voltage IC = 10 µA, IB = 0 40 V
Colle c tor Cu tof f Cu r ren t VCB = 20 V, IE = 0
= 20 V, IE = 0, TA = 125 °C
V
CB
Colle c tor Cu tof f Cu r ren t VCE = 20 V, IB = 0 0.4
Emit ter Cutoff C u rre nt VEB = 4.5 V, IC = 0 1.0
DC Cu r re n t Ga in IC = 10 mA, VCE = 0.35 V
= 10 mA, VCE = 0.35 V
I
C
= - 55 °C
T
A
= 30 mA, VCE = 0.40 V
I
C
= 100 mA, VCE = 1.0 V
I
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
C
= 10 mA, IB = 1.0 mA
I
C
= 125 °C
T
A
= 30 mA, IB = 3.0 mA
I
C
IC = 100 mA, IB = 10 mA
Base- Emi tt er Saturation Voltage IC = 10 mA, IB = 1.0 mA
)
IC = 10 mA, IB = 1.0 mA
= 125 °C
T
A
= 10 mA, IB = 1.0 mA
I
C
= - 55 °C
T
A
= 30 mA, IB = 3.0 mA
I
C
= 100 mA, IB = 10 mA
I
C
40
20
30
20
0.7
0.59
0.59
0.4
30
120
0.2
0.3
0.25
0.5
0.85
1.02
1.02
1.15
1.6
µ
A
µ
A
µ
A
µ
A
V
V
V
V
V
V
V
V
V
2N5769
SMALL SIGNAL CHARACTERISTICS
C
cb
h
fe
Collector-Base Capacitance VCB = 5.0 V, f = 1.0 MHz 4.0 pF
Small-Signal Current Gain IC = 10 mA, VCE = 10 V,
SWITCHING CHARACTERISTICS
t
on
t
off
t
s
Turn-on Time IC = 10 mA, 12 ns
Turn-off Time IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns
St or age Tim e IC = I
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 100 MHz
5.0
= IB2 = 10 mA 13 ns
B1
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