Fairchild Semiconductor 2N5550 Datasheet
2N5550 NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: V
• Collector Dissipation: PC (max)=625mW
CEO
= 140V
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
160
140
6
600
625
150
-55 ~ 150
• Refer to 2N5551 for graphs
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
BV
BV
BV
I
I
h
V
V
f
C
NF
CBO
EBO
T
CBO
CEO
EBO
FE
(sat)
CE
(on)
BE
OB
V
V
V
mA
mW
°C
°C
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=100V, IE=0
VEB= 4V, IC=0
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, VCE=10V
VCB=10V, IE=0
f=1MHz
IC=250µA, VCE=5V
RS=1KΩ
f=10Hz to 15.7KHz
TO-92
1.Emitter 2. Base 3. Collector
160
140
6
60
60
20
100
100
250
0.15
0.25
1.2
300
V
V
V
nA
nA
50
V
V
1
V
V
MHz
6
pF
dB
10
Rev. B
1999 Fairchild Semiconductor Corporation
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
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Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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that has been discontinued by Fairchild semiconductor.
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