
2N5550 NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TRANSISTOR
• Collector-Emitter Voltage: V
• Collector Dissipation: PC (max)=625mW
CEO
= 140V
ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
160
140
6
600
625
150
-55 ~ 150
• Refer to 2N5551 for graphs
ELECTRICAL CHARACTERISTICS (TA=25°°C)
Characteristic Symbol Test Conditions Min Typ Max Unit
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
BV
BV
BV
I
I
h
V
V
f
C
NF
CBO
EBO
T
CBO
CEO
EBO
FE
(sat)
CE
(on)
BE
OB
V
V
V
mA
mW
°C
°C
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=100V, IE=0
VEB= 4V, IC=0
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=50mA, VCE=5V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, VCE=10V
VCB=10V, IE=0
f=1MHz
IC=250µA, VCE=5V
RS=1KΩ
f=10Hz to 15.7KHz
TO-92
1.Emitter 2. Base 3. Collector
160
140
6
60
60
20
100
100
250
0.15
0.25
1.2
300
V
V
V
nA
nA
50
V
V
1
V
V
MHz
6
pF
dB
10
Rev. B
1999 Fairchild Semiconductor Corporation

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