Fairchild Semiconductor 2N3417, 2N3416 Datasheet
2N3416
2N3417
2N3416 / 2N3417
Discrete POWER & Signal
Technologies
B
C
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 50 V
Collector-Base Voltage 50 V
Emitter-Base V ol tage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristic Max Units
2N3416 / 2N3417
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
°C/W
3416-3417, Rev B
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 50 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base B reakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
50 V
5.0 V
Collector-Cutoff Current VCB = 25 V, IE = 0
= 18 V, IE = 0, TA = 100°C
V
CB
Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 nA
DC Current Gain VCE = 4.5 V, IC = 2.0 mA
2N3416
2N3417
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 3.0 mA 0.3 V
)
Base-Emitter Saturation Voltage IC = 50 mA, IB = 3.0 mA 0.6 1.3 V
)
75
180
100
15
225
540
nA
µA
2N3416 / 2N3417
SMALL SIGNAL CHARACTERISTICS
h
fe
Small-Signal Current Gain IC = 2.0 mA, VCE = 4.5 V,
*Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 1.0 kHz 2N3416
2N3417
75
180
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