Fairchild Semiconductor 2N3415 Datasheet
2N3415
2N3415
Discrete POWER & Signal
Technologies
E
C
B
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitter Voltage 25 V
Collector-Base Voltage 25 V
Emitter-Base Voltage 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristi c Max Units
2N3415
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3 °
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
C/W
°C/W
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
V
sat
CE(
V
sat
BE(
SMALL SIGNAL CHARACTERISTICS
h
fe
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 25 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = 10 µA, IE = 0
= 10 µA, IC = 0
I
E
25 V
5.0 V
Co llecto r-C uto ff Cur rent VCB = 25 V, IE = 0
= 25 V, IE = 0, TA = 100°C
V
CB
Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1
DC Current Gain VCE = 4.5 V, IC = 2.0 mA 180 540
Collector-Emitter Saturation Voltage IC = 50 mA , IB = 3.0 mA 0.3 V
)
Base-Emitter Saturation Voltage IC = 50 mA , IB = 3.0 mA 0.6 1.3 V
)
Small-Signal Current Gain IC = 2.0 m A, VCE = 4.5 V,
180
f = 1.0 kHz
0.1
15
µ
A
µ
A
µ
A
2N3415
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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