Fairchild Semiconductor 2N3393, 2N3392, 2N3391A, 2N3390 Datasheet
2N3390
2N3391
2N3391A
2N3392
2N3393
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
Discrete POWER & Signal
Technologies
B
C
E
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
V
CBO
V
EBO
I
C
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Collector-Emitt er Voltage 25 V
Collector-Base Voltage 25 V
Emitter-Base Volt age 5.0 V
Collector Current - Continuous 500 mA
Operating and Storage Junction Temperature Range -55 to +150
°
C
Symbol Characteristic Max Units
2N3390 / 3391/A / 3392 / 3393
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case 83.3
Thermal Resistance, Junction to Ambient 200
625
5.0
mW
mW/°C
°C/W
°C/W
3390-93, Rev B
NPN General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
ON CHARACTERISTICS*
h
FE
Collector-Emitter Breakdown
IC = 10 mA, IB = 0 25 V
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base B reakdown Voltage
I
= 10 µA, IE = 0
C
I
= 10 µA, IC = 0
E
25 V
5.0 V
Collector-Cutoff Current VCB = 18 V, IE = 0 100 nA
Emitter-Cutoff Current VEB = 5.0 V, IC = 0 100 nA
DC Current Gain VCE = 4.5 V, IC = 2.0 mA
2N3390
2N3391/A
2N3392
2N3393
400
250
150
90
800
500
300
180
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
SMALL SIGNAL CHARACTERISTICS
C
ob
h
fe
NF Noise Figure
Output Capacitanc e VCB = 10 V, f = 1.0 MHz 2.0 10 pF
Small-Signal Current Gain IC = 2.0 mA, VCE = 4.5 V,
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
f = 1.0 kHz 2N3390
2N3391/A
2N3392
2N3393
V
= 4.5 V, IC = 100 µA,
CE
= 500 Ω, 2N3391A only
R
G
= 15.7 kHz
B
W
400
250
150
90
1250
800
500
400
5.0 dB
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