Fairchild Semiconductor 1N4454 Datasheet
1N4454
DO-35
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
1N4454
Discrete POWER & Signal
Technologies
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage 50 V
Average Rectified Current 200 mA
DC For ward Cur re nt 400 mA
Recurrent Peak Forward Current 600 mA
Peak Forward Surge Current
Storage Temperature Range -65 to +200
Operating Junction Temperature 175 °C
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
A
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteri st ic Max Units
1N4454
P
D
R
θ
JA
Total De vice Dissip at i on
Derate above 25°C
Thermal Resistance, Junction to Ambient 300
500
3.33
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
Br eakdo wn V oltage
= 5.0 µA
I
R
Reverse Current VR = 50 V
= 50 V, TA = 150°C
V
Forward Voltage
R
= 250 µA
I
F
IF = 1.0 mA
= 2.0 mA
I
F
= 10 mA
I
C
O
T
RR
Diode Capacitance VR = 0, f = 1.0 M Hz 4.0 pF
Reverse Recovery Time IF = 10 mA, VR = 1.0 V,
F
I
= 1.0 m A, RL = 100
rr
Ω
75 V
100
100
505
550
610
575
650
710
1.0
4.0 nS
nA
µ
mV
mV
mV
V
A
1N4454
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