Fairchild Semiconductor FDLL4150, 1N4150 Datasheet

DEVICE
FDLL4150 BLACK ORANGE
1N4150 / FDLL4150
Discrete POWER & Signal
Technologies
COLOR BAND MARKING
1ST BAND 2ND BAND
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
High Conductance Ultra Fast Diode
Sourced from Process 1R. See MMBD1201-1205 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inverse Voltage 50 V Average Rectified Current 200 mA DC Forward Current 400 mA Recurren t Peak Forward Current 600 mA Peak Forward Surge Current
Pulse width = 1.0 second Pulse width = 1.0 microsecond
Storage Temperature Range -65 to +200 Operating Junction Temperature 175
1.0
4.0
A A
° °
C C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
1N / FDLL 4150
P
D
R
θ
JA
ã 1997 Fairchild Semiconductor Corporation
Total Dev ice Dissipation
Derate above 25°C
500
3.33
Thermal Resistan ce, Junction to Ambient 300
mW
mW/°C
C/W
°
µ
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
T
FR
Breakdown Voltage
I
= 5.0 µA
R
Reverse Current VR = 50 V
V
= 50 V, TA = 150°C
R
Forward Voltage IF = 1.0 mA
I
= 10 mA
F
I
= 50 mA
F
= 100 mA
I
F
I
= 200 mA
F
75 V
100
100 540 660 760
820
0.87
620
740
860
920
1.0
nA
mV mV mV mV
Diode Capacitance VR = 0, f = 1.0 MHz 2.5 pF Reverse Recovery Time
I
= IR = 10 mA-200 mA, RL = 100
F
I
= IR =200 mA-400 mA,RL = 100
F
Ω Ω
4.0
6.0
nS nS
Forward Recovery Time IF = 200 mA, VFR = 1.0 V 10 nS
A
V
1N4150 / FDLL4150
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