Fairchild USB10P service manual

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USB10P
P-Channel 2.5V Specified PowerTrenchTM MOSFET

General Description Features

June 1999

This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.

These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.

SOT-23

SuperSOTTM-8

S

D

D

G

D

D

pin 1

SuperSOT -6

TM

-4.5 A, -20 V. R
R

= 0.045 Ω @ VGS = -4.5 V

DS(ON)

= 0.065 Ω @ VGS = -2.5 V.

DS(ON)

Low gate charge (13nC typical).
High performance trench technology for extremely low

R

.

DS(ON)

SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).

SO-8

SOT-223SuperSOTTM-6

1

2

3

3

SOIC-16

6

5

4

Absolute Maximum Ratings T

= 25°C unless otherwise note

A

Symbol Parameter Ratings Units

V
V
I

D

Drain-Source Voltage -20 V

DSS

Gate-Source Voltage - Continuous ±8 V

GSS

Drain Current - Continuous (Note 1a) -4.5 A

- Pulsed -20

P

TJ,T

Maximum Power Dissipation (Note 1a) 1.6 W

D

Operating and Storage Temperature Range -55 to 150 °C

STG

(Note 1b)

0.8

THERMAL CHARACTERISTICS

R
R

©1999 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJA

Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

JC

θ

USB10P Rev.D

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

∆BV

I

DSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V
Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC -18 mV/oC

/∆T

J

Zero Gate Voltage Drain Current VDS = -16 V, V

= 0 V -1 µA

GS

TJ = 55 oC -10 µA
I
I

GSSF

GSSR

Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -8 V, V

= 0 V -100 nA

DS

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
Gate Threshold VoltageTemp.Coefficient ID = -250 µA, Referenced to 25 oC 3 mV/oC

/∆T

J

Static Drain-Source On-Resistance VGS = -4.5 V, ID = -4.5 A 0.039 0.045

Ω

TJ = 125 oC 0.054 0.072

VGS = -2.5 V, ID = -3.8 A 0.057 0.065

I

D(on)

g

FS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -20 A
Forward Transconductance VDS = -10 V, ID = -4.5 A 6.5 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V, 1240 pF
Output Capacitance f = 1.0 MHz 270 pF
Reverse Transfer Capacitance 100 pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

t

r

t

D(off)

t

f

Q

g

Q

gs

Q

gd

Turn - On Delay Time VDD = -5 V, ID = -1 A, 8 16 ns
Turn - On Rise Time

VGS = -4.5 V, R

GEN

= 6 Ω

15 27 ns

Turn - Off Delay Time 45 65 ns
Turn - Off Fall Time 30 50 ns
Total Gate Charge VDS = -10 V, ID = -4.5 A, 13 19 nC
Gate-Source Charge VGS = -5 V 1.8 nC
Gate-Drain Charge 3 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

V

SD

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

design while R

a. 78oC/W when mounted on a 1 in
b. 156oC/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Continuous Source Diode Current -1.3 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.75 -1.2 V

Notes:

is determined by the user's board design.

CA

θ

2

pad of 2oz Cu on FR-4 board.

is guaranteed by

JC

θ

USB10P Rev.D

Typical Electrical Characteristics

20

V = -4.5V

GS

16

12

8

4

D

- I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4 5

-3.0V

- 2.5V

- 2.0V

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6

I = -4.5A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

1.6

V = -2.5V

GS

1.4

-3.0V

1.2

-3.5V

-4.0V

DS(ON)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8
0 5 10 15 20

- I , DRAIN CURRENT (A)

D

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.15

0.12

0.09

0.06

0.03

DS(ON)

R , ON-RESISTANCE (OHM)

0

1 2 3 4 5

- V , GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

I = -2.0A

D

T = 125°C

A

25°C

Figure 3. On-Resistance Variation

with Temperature.

20

V = -5V

DS

16

12

8

D

4

- I , DRAIN CURRENT (A)

0

0 0.8 1.6 2.4 3.2 4

-V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5.Transfer Characteristics.

T = -55°C

J

25°C

125°C

Figure 4. On Resistance Variation with

Gate-to-Source Voltage.

20

V = 0V

GS

10

T = 125°C

1

0.1

0.01

S

- I , REVERSE DRAIN CURRENT (A)

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

J

25°C

-55°C

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.

FDC638P Rev.D