Datasheet RFD16N05L Datasheet (Fairchild Semiconductor)

RFD16N05L, RFD16N05LSM

Data Sheet April 1999

16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.

Formerly developmental type TA09871.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N05L TO-251AA RFD16N05L
RFD16N05LSM TO-252AA RFD16N05LSM

NOTE: Whenordering,includethe entire partnumber.Addthe suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD16N05LSM9A

File Number

2269.2

Features

• 16A, 50V

DS(ON)

= 0.047Ω

•r

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

Packaging

DRAIN (FLANGE)

G

S

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN (FLANGE)

6-163

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFD16N05L, RFD16N05LSM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFD16N05L,

RFD16N05LSM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DGR

D

DM

GS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 V
50 V
16

45

±10 V

60

0.48

-55 to 150

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

DSSID

GS(TH)VGS

DSS

GSS

= 250mA, VGS = 0V, Figure 10 50 - - V

= VDS, ID = 250mA, Figure 9 1 - 2 V

VDS = 40V, VGS = 0V
TC = 150oC

-- 1µA

--50µA

VGS= ±10V, VDS = 0V - - 100 nA

= 16A, VGS = 5V - - 0.047 Ω

ID = 16A, VGS = 4V - - 0.056 Ω
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

(ON)

g(5)

g(TH)

θJC
θJA

VDD = 25V, ID = 8A,

V

Figures 15, 16

r

5V, RGS = 12.5Ω

GS =

- - 60 ns

-14 - ns

-30 - ns

-42 - ns

f

-14 - ns

- - 100 ns
VGS = 0V to 10V VDD = 40V,
VGS = 0V to 5V - - 45 nC
VGS = 0V to 1V - - 3 nC

ID = 16A,
RL = 2.5Ω
Figures 17, 18

- - 80 nC

- - 2.083

- - 100

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD
rr

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature.

6-164

ISD = 16A - - 1.5 V
ISD = 16A, dISD/dt = 100A/µs - - 125 ns

RFD16N05L, RFD16N05LSM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

10

TC = 25oC

TJ = MAX RATED
ID MAX CONTINUOUS

10

20

15

10

, DRAIN CURRENT (A)

5

D

I

0

25 50 75 100 150

, CASE TEMPERATURE (oC)

T

C

125

FIGURE 2. MAXIMUM CONTINUOUS DRAINCURRENT vs

CASE TEMPERATURE

2

10

Idm

STARTING TJ = 25oC

OPERATION IN THIS AREA
LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1
1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

10

DC

, AVALANCHE CURRENT (A)

AS

I

10

2

10

STARTING TJ = 150oC

If R = 0
tAV = (L)(IAS)/(1.3 RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3 RATED BV

t

AV

1

tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

1100.01 0.10

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA

(SINGLE PULSE UIS SOA)

45

VGS = 10V

30

15

, DRAIN TO SOURCE CURRENT (A)

DS

I

0

0 1.5 3.0 4.5 7.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

VGS = 5V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

TC = 25oC

VGS = 3V

VGS = 2V

6.0

45

V

= 15V

DS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

30

15

, DRAIN TO SOURCE ON CURRENT (A)

0

DS(ON)

I

0 3.0 4.5 6.01.5

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS

6-165

RFD16N05L, RFD16N05LSM

Typical Performance Curves

1.4
ID = 16V

1.3

VDS = 15V

1.2

1.1

1.0

0.9

0.8

ON RESISTANCE

0.7

0.6

NORMALIZED DRAIN TO SOURCE

0.5

547

VGS, GATE TO SOURCE VOLTAGE (V)

Unless Otherwise Specified (Continued)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

6

FIGURE 7. DRAIN TO SOURCEON RESISTANCEvs GATE

VOLTAGE AND DRAIN CURRENT

1.4
ID = 250µA

= V

V

1.3

GS

DS

1.2

2.5
ID = 16A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.

2.0

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50

0

T

J

50

, JUNCTION TEMPERATURE (oC)

100 200

FIGURE 8. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.4
ID = 250µA

1.2

150

1.1

1.0

0.9

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.7

0.6

-50

0 200

T

J

50 100 150

, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED GATE THRESHOLD vs JUNCTION

TEMPERATURE

2000

1600

1200

C

= CGS + C

ISS

C

800

C, CAPACITANCE (pF)

400

0

010152025

5

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

C

RSS
OSS

= C

GD

≈ CDS + C

GD

GD

VGS= 0V
f = 1MHz

C

ISS

C

OSS

C

RSS

1.0

0.8

BREAKDOWN VOLTAGE

0.6

NORMALIZED DRAIN TO SOURCE

0

0 150

T

J

50-50

, JUNCTION TEMPERATURE (oC)

100 200

FIGURE 10. NORMALIZED DRAIN TO SOURCEBREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

50

37.5

25

12.5

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD = BV

I

GREF()

20

------------------------ ­I

GACT()

RL = 3.125Ω, VGS = 5V

I

= 0.60mA

G(REF)

PLATEAU VOLTAGES IN
DESCENDING ORDER:

VDD = BV
VDD = 0.75 BV

DSS

VDD = 0.50 BV
VDD = 0.25 BV

DRAIN SOURCE VOLTAGE

DSS

GATE

SOURCE

VOLTAGE

t, TIME (µs)

DSS
DSS
DSS

VDD = BV

80

DSS

I

G REF()

------------------------ ­I

G ACT()

10

8

6

4

2

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 12. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

6-166

RFD16N05L, RFD16N05LSM

Test Circuits and Waveforms

V

DS

BV

DSS

L

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

+

V

DD

-

DUT

0V

P

I

AS

0.01Ω

0

t

FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 14. UNCLAMPED ENERGY WAVEFORMS

t

P

I

AS

t

AV

V

DS

V

DD

t

ON

t

d(ON)

t

R

L

+

V

R

G

DD

-

V

DS

90%

0

r

10%

DUT

V

GS

V

GS

10%

0

50%

PULSE WIDTH

FIGURE 15. SWITCHING TIME TEST CIRCUIT FIGURE 16. RESISTIVE SWITCHING WAVEFORMS

V

DS

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

CURRENT

REGULATOR

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

SAME TYPE
AS DUT

D

DUT

S

CURRENT

I

D

SAMPLING

(ISOLATED
SUPPLY)

V

DS

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

I

G(REF)

0

t

d(OFF)

90%

V

GS

t

OFF

50%

t

f

90%

10%

FIGURE 17. GATE CHARGE TEST CIRCUIT FIGURE 18. GATE CHARGE WAVEFORMS

6-167

RFD16N05L, RFD16N05LSM

Spice Model

.SUBCKT RFD16N05L213;rev 04/08/92
*Nominal Temperature = 25oC
.MODEL MOSMOD NMOS (VTO=2.054 KP=24.73 IS=1e-30 N=10 TOX=1 L=1u W=1u)
Vto 21 6 0.448
Rsource 8 7 RDSMOD 0.614E-3
Rdrain 5 16 RDSMOD 27.38E-3
.MODEL RDSMOD RES (TC1=3.66E-3 TC2=1.46E-5)
.MODEL RVTOMOD RES (TC1=-1.81E3 TC2=1.41E-6)
Ebreak 11 7 17 18 70.9
.MODEL RBKMOD RES (TC1=1.01E-3 TC2=5.21E-8)
.MODEL DBKMOD D (RS=8.82E-2 TRS1=-2.01E-3 TRS2=7.32E-10)
.MODEL DBDMOD D (IS=1.34E-13 RS=1.21E-2 TRS1=1.64E-3 TRS2=2.59E-6 +CJO=1.13E-9 TT=4.14E-8)
Cin 6 8 1.21E-9
Ca 12 8 3.33E-9
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.25 VOFF=-2.25)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.25 VOFF=-4.25)
.MODEL DPLCAPMOD D (CJO=5.22E-10 IS=1e-30 N=10)
Cb 15 14 3.11E-9
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.65 VOFF=4.35)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=4.35 VOFF=-0.65)
Rgate 9 20 2.98
Lgate 1 9 1.38E-9
Ldrain 2 5 1.0E-12
Lsource 3 7 1.0E-9
Dbody 7 5 DBDMOD
Dbreak 5 11 DBKMOD
Dplcap 10 5 DPLCAPMOD
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg610681
Evto 20 6 18 8 1
It8171
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
Rbreak 17 18 RBKMOD 1
Rin 6 8 1e9
Rvto 18 19 RVTOMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
Vbat 8 19 DC 1
.ENDS

(RFD16N05L)

x

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6-168