Fairchild RFD16N05L, RFD16N05LSM service manual

RFD16N05L, RFD16N05LSM

Data Sheet December 2003

16A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performa nce. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, switching regulators,
switching co n verters, motor relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.

Formerly developmental type TA09871.

Ordering Information

PART NUMBER PACKAGE BRAND

RFD16N05L TO-251AA RFD16N05L
RFD16N05LSM TO-252AA RFD16N05LSM

NOTE: When ordering, include the en tire part number . Add the suffix 9A
to obtain the T O- 252AA v ariant in tape and reel, i.e . RF D16N 05LSM9A

Features

• 16A, 50V

•r

DS(ON)

= 0.047Ω

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

Packaging

DRAIN (FLANGE)

G

S

JEDEC TO-251AA JEDEC TO-252AA

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN (FLANGE)

RFD16N05L, RFD16N05LSM Rev. C0©2003 Fairchild Semiconductor Corporation

RFD16N05L, RFD16N05LSM

Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

RFD16N05L,

RFD16N05LSM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GS

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DS

DGR

D

DM

GS

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

J

STG

Maximum Tem perature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50 V
50 V
16

45

±10 V

60

0.48

-55 to 150

300
260

A
A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

DSSID

GS(TH)VGS

DSS

GSS

= 250mA, VGS = 0V, Figure 10 50 - - V

= VDS, ID = 250mA, Figure 9 1 - 2 V

VDS = 40V, VGS = 0V - - 1 µA

= 150oC --50µA

T

C

V

= ±10V, VDS = 0V - - 100 nA

GS

= 16A, VGS = 5V - - 0.047 Ω

ID = 16A, VGS = 4V - - 0.056 Ω
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)

Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

(ON)

g(5)

g(TH)

θJC
θJA

VDD = 25V, ID = 8A,

V

Figures 15, 16

r

5V, RGS = 12.5Ω

GS =

--60ns

-14 - ns

-30 - ns

-42 - ns

f

-14 - ns

--100ns

VGS = 0V to 10V VDD = 40V,

= 16A,

I

VGS = 0V to 5V - - 45 nC

VGS = 0V to 1V - - 3 nC

D

RL = 2.5Ω
Figures 17, 18

--80nC

- - 2.083

--100oC/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Diode Reverse Recovery Time t

SD
rr

NOTES:

2. Pulse Te st: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature.

ISD = 16A - - 1.5 V
ISD = 16A, dISD/dt = 100A/µs - - 125 ns

RFD16N05L, RFD16N05LSM Rev. C0©2003 Fairchild Semiconductor Corporation

RFD16N05L, RFD16N05LSM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

2

10

TC = 25oC

TJ = MAX RATED
ID MAX CONTINUOUS

10

20

15

10

, DRAIN CURRENT (A)

5

D

I

0

25 50 75 100 150

T

, CASE TEMPERATURE (oC)

C

125

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

2

10

Idm

STAR TING TJ = 25oC

OPERATION IN THIS AREA
LIMITED BY r

1

, DRAIN CURRENT (A)

D

I

0.1
1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

10

DC

, AVALANCHE CURRENT (A)

AS

I

10

2

10

STARTING TJ = 150oC

If R = 0
tAV = (L)(IAS)/(1.3 RATED BV

If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3 RATED BV

1

tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

1100.01 0.10

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA

(SINGLE PULSE UIS SOA)

45

VGS = 10V

30

15

, DRAIN TO SOURCE CURRENT (A)

DS

I

0

0 1.5 3.0 4.5 7.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4V

VGS = 5V

PULSE DURA TION = 80µs
DUTY CYCLE = 0.5% MAX.

TC = 25oC

VGS = 3V

VGS = 2V

6.0

45

30

15

, DRAIN TO SOURCE ON CURRENT (A)

DS(ON)

I

= 15V

V

DS

PULSE DURA TION = 80µs
DUTY CYCLE = 0.5% MAX

0

0 3.0 4.5 6.01.5

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. SATURATION CHARACTERISTICS FIGURE 6. TRANSFER CHARACTERISTICS

RFD16N05L, RFD16N05LSM Rev. C0©2003 Fairchild Semiconductor Corporation