Features
• Compact surface mount package with
J-bend leads.
• 1.5 Watt Power Dissipation package.
• 1.0 Ampere, forward voltage less
than 395 mv.
MBRS130L
MBRS130L
SMB/DO-214AA
Color Band Denotes Cathode
Mark: 1BL3
Schottky Rectifiers
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 30 V
RRM
I
F(AV)
Average Rectified Forward Current @ T
Parameter
@ T
I
T
TJ
FSM
stg
Non-Repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +125
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
R
JL
θ
Thermal Resistance, Junction to Lead * 12
Parameter
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
Symbol
VF Forward Voltage
IR Reverse Current @ VR = 30 V
Parameter
@ IF = 1.0 A
= 25°C unless otherwise noted
A
= 120°C
A
= 110°C
A
= 25°C unless otherwise noted
A
= 2.0 A
IF
= 30 V, TA = 100 °C
VR
Value
1.0
2.0
40 A
Value
395
1.0
Value
445
10
Units
A
A
C
°
C
°
Units
C/W
°
Units
mV
mV
mA
mA
2001 Fairchild Semiconductor Corporation
MBRS130L, Rev. B
T ypical Characteristics
MBRS130L
Schottky Rectifier
(continued)
10
[A]
F
1
100 C
°
25 C
°
Forward Current, I
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage, VF [V]
Figure 1. Forward V oltage Characteristics
130
120
110
[pF]
T
100
90
80
70
60
Total Capacitance,C
50
40
30
0 3 6 9 12151821242730
100
10
[mA]
R
1
0.1
0.01
Reverse Leakage Current, I
1E-3
0 5 10 15 20 25 30 35 40
Figure 2. Reverse Current vs Reverse Voltage
Reverse Bias Voltage, VR [V]
Figure 3. Total Capacitance
100 C
°
Reverse Voltage, VR [V]
Ta= +25 C
°
125 C
°
75 C
°
25 C
°
MBRS130L, Rev. B