Fairchild MBRP3045N service manual
MBRP3045N
Schottky Barrier Rectifier
Applications
• Switched mode power supply
• Freewheeling diodes
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
1
TO220
1.Anode
3.Anode
2. Cathode
MBRP3045N — Schottky Barrier Rectifier
June 2008
Absolute Maximum Ratings T
=25°C unless otherwise noted
C
Symbol ParameterValueUnits
V
RRM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Maximum Repetitive Reverse Voltage 45 V
Maximum DC Reverse Voltage 45 V
Average Rectified Forward Current @ TC = 100°C30A
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature -65 to +150 °C
200 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case (per diode) 2.2 °C/W
Electrical Characteristics (per diode)
Symbol Parameter Value Units
V
FM
*
I
RM
*
* Pulse Test: Pulse Width=300 μs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
I
= 15A TC = 25 °C 0.65
F
I
= 15A
F
I
= 30A
F
I
= 30A
F
Maximum Instantaneous Reverse Current
@ rated V
R
T
= 125 °C
C
T
= 25 °C
C
T
= 125 °C
C
= 25 °C
T
C
T
= 125 °C
C
0.57
0.80
0.65
1
80
V
mA
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBRP3045N Rev.A 1
Typical Performance Characteristics
MBRP3045N — Schottky Barrier Rectifier
100
[A]
10
F
1
TJ=125 oC
Forward Current, I
0.1
0.01
0.0 0.5 1.0 1.5
TJ=75 oC
TJ=25 oC
Forward Volt age Drop, VF[V]
Figure 1. Typical Forward Voltage Characteristics
(per diode)
1000
900
800
700
[pF]
J
600
500
400
300
TJ=25 oC
100
10
[mA]
R
1
0.1
Reverse Current, I
0.01
1E-3
0 10203040
TJ=150 oC
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
10
C/W]
o
1
200
Juntion Capacitance, C
0 10203040
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
35
30
[A]
F(AV)
25
20
15
10
5
Average Forward Current, I
0
0 20 40 60 80 100 120 140 160
DC
Case Temperature, TC[oC]
Figure 5. Forward Current Derating Curve
Transient Thermal Impedance [
100μ 1m 10 m 100m 1 10
Pulse Duration [s]
Figure 4. Thermal Impedance Characteristics
(per diode)
250
[A]
225
FSM
200
175
150
125
100
75
Max. Forward Surge Current, I
50
110100
Number of Cycles @ 60Hz
Figure 6. Non-Repetitive Surge Current
(per diode)
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBRP3045N Rev. A 2
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