Fairchild MBRP3010N service manual
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
MBRP3010N
MBRP3010N
Applications
• Switched mode power supply
• Freewheeling diodes
1 2 3
TO-220
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
RRM
V
R
I
F(AV)
I
FSM
T
J, TSTG
Maximum Repetitive Reverse Voltage 100 V
Maximum DC Reverse Voltage 100 V
Average Rectified Forward Current @ TC = 105°C30 A
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature -65 to +150 °C
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Maximum Thermal Resistance, Junction to Case (per diode) 1.7 °C/W
Electrical Characteristics
Symbol Parameter Value Units
V
FM
*
I
RM
*
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current
= 15A
I
F
I
= 15A
F
= 30A
I
F
= 30A
I
F
@ rated V
=25°°°°C unless otherwise noted
C
(per diode)
TC = 25 °C
R
T
= 25 °C
C
T
= 125 °C
C
= 25 °C
T
C
= 125 °C
T
C
= 125 °C
T
C
250 A
0.85
0.67
1.05(TYP.)
0.80
1
20
V
mA
©2004 Fairchild Semiconductor Corporation Rev. A, January 2004
Typical Characteristics
MBRP3010N
TJ=125 oC
TJ=75 oC
TJ=25 oC
[V]
F
100
10
[A]
F
1
0.1
Forward Current, I
0.01
0.0 0.5 1.0 1.5
Forward Voltage Drop, V
Figure 1. Typical Forward Volta ge C haracteristics
(per diode)
1000
900
800
[pF]
700
J
600
500
400
300
200
TJ=25 oC
1
10
0
10
[mA]
R
-1
10
-2
10
Reverse Current, I
-3
10
20 40 60 80 100
TJ=125 oC
TJ=75 oC
TJ=25 oC
Reverse Voltage, VR[V]
Figure 2. Typical Reverse Current
vs. Reverse Voltage (p er diode)
10
C/W]
o
1
Juntion Capacitance, C
100
90
80
0 20406080100
Reverse Voltage, VR[V]
Figure 3. Typical Junction Capacitance
(per diode)
35
30
[A]
F(AV)
25
20
15
10
5
Average Forward Current, I
0
0 20 40 60 80 100 120 140 160
Case Temperature, TC[oC]
DC
Figure 5. Forward Current Derating Curve
Transient Thermal Impedance [
100µ 1m 10m 100m 1 10
Puls e Dura ti on [s]
Figure 4. Thermal Impedance Characte rist ics
(per diode)
300
[A]
275
FSM
250
225
200
175
Max. Forward Surge Current, I
150
110100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Surge Current
(per diode)
©2004 Fairchild Semiconductor Corporation Rev. A, January 2004
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