Fairchild MBR735, MBR745, MBR750, MBR760 service manual
MBR735 - MBR760
Features
•
Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
Schottky Rectifiers
1
2
TO-220AC
PIN 1 +
PIN 2 -
CASE Positive
Dimensions
inches (mm)
MBR735 - MBR760
+
CASE
are in:
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 35 45 50 60 V
RRM
I
Average Rectified Forward Current 7.5 A
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
T
stg
TJ Operating Junction Temperature -65 to +150
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175
Parameter
= 25°C unless otherwise noted
A
735 745 750 760
Value
Units
150 A
C
°
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 2.0 W
R
JA
θ
R
JL
θ
Thermal Resistance, Junction to Ambient 60
Thermal Resistance, Junction to Lead 3.0
Electrical Characteristics T
Symbol
VF
IR
I
RRM
Forward Voltage I
Reverse Current @ rated V
T
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Parameter
Parameter
7.5 A, TC = 25°C
F =
7.5 A, TC = 125°C
I
F =
I
15 A, TC = 25°C
F =
15 A, TC = 125°C
I
F =
R TA
= 25°C unless otherwise noted
A
= 25°C
= 125°C
A
Value
Device
735 745 750 760
-
0.57
0.84
0.72
0.1
15
0.75
0.65
-
-
0.5
50
Units
C/W
°
C/W
°
Units
V
V
V
V
mA
mA
1.0 0.5 A
2001 Fairchild Semiconductor Corporation
MBR735 - MBR760, Rev. C
T ypical Characteristics
MBR735 - MBR760
Schottky Rectifier
(continued)
10
[A]
F
8
6
SINGLE PHASE
4
HALF WAVE
60HZ
RESISTIVE OR
2
INDUCTIVE LOAD
.375" ( 9.00mm) LOAD
LENGTHS
0
0 25 50 75 100 125 150 175
Average Rectified Forward Current, I
MBR735-MBR745
Ambient Temperature [ºC]
MBR750-MBR760
175
[A]
FSM
150
125
100
75
50
25
Peak Forward Surge Current, I
12 51020 50100
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
50
º
T = 125 C
10
[A]
F
1
0.1
Forward Current, I
0.01
A
T = 25 C
A
MBR735-MBR745
MBR750-MBR760
Pulse Width = 300
2% Duty Cycle
µµµµ
S
0 0.2 0.4 0.6 0.8 1 1.2
Forward Voltage, VF [V]
º
50
º
T = 125 C
10
MBR735-MBR745
[mA]
R
1
MBR750-MBR760
0.1
MBR735-MBR745
0.01
Reverse Current, I
0.001
0 20406080100120140
A
T = 75 C
º
A
º
T = 25 C
A
MBR750-MBR760
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
5000
1000
[pF]
T
100
MBR750-MBR760
Total Capacitance, C
10
0.1 1 10 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
2001 Fairchild Semiconductor Corporation
MBR735-MBR745
100
10
1
Transient Thermal Impedance [ºC/W]
0.1
0.01 0.1 1 10 100
Pulse Duration [s]
MBR735 - MBR760, Rev. C
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