MBR4035PT - MBR4060PT
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
Schottky Rectifiers
23
1
TO-3P/TO-247AD
PIN 1
PIN 3
+
CASE
PIN 2
MBR4035PT-MBR4060PT
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 35 45 50 60 V
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repetitive Peak Forward Surge Current
FSM
T
stg
TJ Operating Junction Temperature -65 to +150
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175
Parameter
= 125°C
A
= 25°C unless otherwise noted
A
4035PT 4045PT 4050PT 4060PT
Value
Units
40 A
400 A
°C
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 3.0 W
R
JL
θ
Thermal Resistance, Junction to Lead 1.2
Electrical Characteristics T
Symbol
VF
IR
I
RRM
Forward Voltage I
Reverse Current @ rated V
T
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Parameter
Parameter
20 A, TC = 25°C
F =
20 A, TC = 125°C
I
F =
I
40 A, TC = 25°C
F =
40 A, TC = 125°C
I
F =
R TA
= 25°C unless otherwise noted
A
= 25°C
= 125°C
A
Value
Device
4035PT 4045PT 4050PT 4060PT
0.70
0.60
0.80
0.75
1.0
100
0.72
0.62
-
-
Units
C/W
°
Units
V
V
V
V
mA
mA
2.0 1.0 A
2001 Fairchild Semiconductor Corporation
MBR4035PT - MBR4060PT, Rev. C
T ypical Characteristics
MBR4035PT-MBR4060PT
Schottky Rectifier
(continued)
60
[A]
F
50
40
SINGLE PHASE
30
HALF WAVE
60HZ
20
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
10
LENGTHS
0
0 25 50 75 100 125 150 175
Average Rectified Forward Current, I
Ambient Temperature [ºC]
400
[A]
FSM
300
200
100
Peak Forward Surge Current, I
12 51020 50100
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
50
º
T = 25 C
A
MBR4035PT-MBR4045PT
[A]
10
F
º
T = 150 C
A
1
0.1
MBR4050PT-MBR4060PT
Forward Current, I
0.01
0 0.2 0.4 0.6 0.8 1 1.2
Pulse Width = 300
2% Duty Cycle
µµµµ
S
Forward Voltage, VF [V]
Figure 3. Forward Voltage Characteristics
50
MBR4035PT-MBR4045PT
10
[mA]
R
MBR4050PT-MBR4060PT
1
0.1
MBR4035PT-MBR4045PT
0.01
Reverse Current, I
0.001
0 20406080100120140
MBR4050PT-MBR4060PT
º
T = 125 C
A
º
T = 75 C
A
º
T = 25 C
A
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
5000
2000
[pF]
T
1000
MBR4050PT-MBR4060PT
500
200
Total Capacitance, C
100
0.1 1 10 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
2001 Fairchild Semiconductor Corporation
MBR4035PT-MBR4045PT
100
10
1
Transient Thermal Impedance [ºC/W]
0.1
0.01 0.1 1 10 100
Pulse Duration [s]
MBR4035PT - MBR4060PT, Rev. C