Fairchild MBR3035PT, MBR3045PT, MBR3050PT, MBR3060PT service manual

MBR3035PT - MBR3060PT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

Schottky Rectifiers

23

1

TO-3P/TO-247AD

PIN 1

PIN 3

+

CASE
PIN 2

MBR3035PT - MBR3060PT

Absolute Maximum Ratings* T

Symbol

V

Maximum Repetitive Reverse Voltage 35 45 50 60 V

RRM

I

Average Rectified Forward Current 30 A

F(AV)

I

Non-repetitive Peak Forward Surge Current

FSM

T

stg

TJ Operating Junction Temperature -65 to +150

8.3 ms Single Half-Sine-Wave

Storage Temperature Range -65 to +175

Parameter

= 25°C unless otherwise noted

A

3035PT 3045PT 3050PT 3060PT

Value

Units

200 A

C

°

C

°

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

PD Power Dissipation 3.0 W
R

JL

θ

Thermal Resistance, Junction to Lead 1.4

Electrical Characteristics T

Symbol

VF

IR

I

RRM

Forward Voltage I

Reverse Current @ rated V
T

Peak Repetitive Reverse Surge Current

2.0 us Pulsu Width, f = 1.0 KHz

Parameter

Parameter

20 A, TC = 25°C

F =

I

20 A, TC = 125°C

F =

30 A, TC = 25°C

I

F =

I

30 A, TC = 125°C

F =

R TA

= 25°C unless otherwise noted

A

= 25°C

= 125°C

A

Value

Device

3035PT 3045PT 3050PT 3060PT

-

0.60

0.76

0.72

1.0
60

0.75

0.65

-

-

5.0

100

Units

C/W

°

Units

V
V
V
V

mA
mA

1.0 0.5 A

2001 Fairchild Semiconductor Corporation

MBR3035PT - MBR3060PT, Rev. C

T ypical Characteristics

MBR3035PT - MBR3060PT

Schottky Rectifier

(continued)

30

[A]

F

MBR3035PT-MBR3045PT

24

MBR3050PT-MBR3060PT

18

SINGLE PHASE
HALF WAVE

12

60HZ
RESISTIVE OR
INDUCTIVE LOAD

6

.375" (9.00mm) LOAD
LENGTHS

0

0 25 50 75 100 125 150 175

Average Rectified Forward Current, I

Ambient Temperature [ºC]

300

[A]

250

FSM

200

150

100

50

0

12 51020 50100

Peak Forward Surge Current, I

Number of Cycles at 60Hz

Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current

50

º

T = 25 C

A

MBR3050PT-MBR3060PT

[A]

F

10

º

T = 150 C

A

1

0.1

MBR3035PT-MBR3045PT

Forward Current, I

0.01
0 0.2 0.4 0.6 0.8 1 1.2

Pulse Width = 300
2% Duty Cycle

µµµµ

S

Forward Voltage, VF [V]

Figure 3. Forward Voltage Characteristics

50

MBR3035PT-MBR3045PT

10

[mA]

R

MBR3050PT-MBR3060PT

1

0.1

MBR3035PT-MBR3045PT

0.01

Reverse Current, I

0.001
0 20406080100120140

MBR3050PT-MBR3060PT

º

T = 125 C

A

º

T = 75 C

A

º

T = 25 C

A

Percent of Rated Peak Reverse Voltage [%]

Figure 4. Reverse Current vs Reverse Voltage

5000

2000

[pF]

T

1000

MBR3050PT-MBR3060PT

500

200

Total Capacitance, C

100

0.1 1 10 100

Reverse Voltage, VR [V]

Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics

2001 Fairchild Semiconductor Corporation

MBR3035PT-MBR3045PT

100

10

1

Transient Thermal Impedance [ºC/W]

0.1

0.01 0.1 1 10 100

Pulse Duration [s]

MBR3035PT - MBR3060PT, Rev. C