Fairchild MBR2535CT, MBR2545CT, MBR2550CT, MBR2560CT service manual
MBR2535CT-MBR2560CT
25 Ampere Schottky Barrier Rectifiers
• Low power loss, high efficiency.
• High surge capability.
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
• Metal silicon junction, majority carrier conduction.
• High current capability, low forward voltage drop.
• Guardring for overvoltage pr ot ection.
1
2
3
TO-220AB
PIN1
PIN3
MBR2535CT-MBR2560CT — 25 Ampere Schottky Barrier Rectifiers
August 2009
+
CASE
PIN2
Absolute Maximum Ratings* T
Symbol Parameter
V
RRM
I
F(AV)
I
FSM
T
STG
T
Maximum Repetitive Reverse Voltage 35 45 50 60 V
Average Rectified Forward Current
.375 " lead length @ T
= 130°C
A
Non-repetitive Peak Forward Surge Current.
8.3ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175 °C
Operating Junction Temperature Range -65 to +150 °C
J
= 25°C unless otherwise noted
A
2535CT 2545CT 2550CT 2560CT
Value
25 A
200 A
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
P
D
R
θJA
R
θJL
Power Dissipation 2.0 W
Thermal Resistance, Junction to Ambient 60 °C/W
Thermal Resistance, Junction to Lead 1.5 °C/W
Units
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT-MBR2560CT Rev. C1 1
MBR2535CT-MBR2560CT — 25 Ampere Schottky Barrier Rectifiers
Electrical Characteritics T
= 25°C unless otherwise specified
A
Symbol Parameter
V
I
RRM
I
C
Forward Voltage
F
IF=12.5A, TC=25°C
IF=12.5A, TC=125°C
=25A, TC=25°C
I
F
IF=25A, TC=125°C
Maximum Reverse Current at rated V
Diode
R
@ T
=25°C
A
@ TA=125°C
Peak Repetitive Reverse Surge Current
2.0 μs Pulse Width, f = 1.0 KHz
Typical Junction Capacitance 600 460 pF
j
RRM
Per
Value
2535CT 2545CT 2550CT 2560CT
0.75
0.65
0.82
0.73
0.2
15.0
1.0 0.5 A
0.82
0.78
0.2
10.0
Units
V
mA
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR2535CT-MBR2560CT Rev. C1 2
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