Fairchild MBR2035CT, MBR2045CT, MBR2050CT, MBR2060CT service manual

MBR2035CT - MBR2060CT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

Schottky Rectifiers

1

2

3

TO-220AB

PIN 1

PIN 3

+

CASE
PIN 2

MBR2035CT-MBR2060CT

Absolute Maximum Ratings* T

Symbol

V

Maximum Repetitive Reverse Voltage 35 45 50 60 V

RRM

I

Average Rectified Forward Current

F(AV)

I

Non-repet itive Peak Forward Surge Current

FSM

T

stg

TJ Operating Junction Temperature -65 to +150

.375 " lead length @ T

8.3 ms Single Half-Sine-Wave

Storage Temperature Range -65 to +175

Parameter

= 135°C

A

= 25°C unless otherwise noted

A

2035CT 2045CT 2050CT 2060CT

Value

Units

20 A

150 A

°C

C

°

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol

PD Power Dissipation 2.0 W
R

JA

θ

R

JL

θ

Thermal Resistance, Junction to Ambient * 60
Thermal Resistance, Junction to Lead 2.0

Electrical Characteristics T

Symbol

VF

IR

I

RRM

Forward Voltage I

Reverse Current @ rated V

Peak Repetitive Reverse Surge Current

2.0 us Pulse Width, f = 1.0 KHz

Parameter

Parameter

10 A, TC = 25°C

F =

10 A, TC = 125°C

I

F =

I

20 A, TC = 25°C

F =

20 A, TC = 125°C

I

F =

R TA

T

= 25°C unless otherwise noted

A

= 25°C
= 125°C

A

Value

Device

2035CT 2045CT 2050CT 2060CT

-

0.57

0.84

0.72

0.1
15

0.80

0.70

0.95

0.85

0.15
150

Units

C/W

°

C/W

°

Units

V
V
V
V

mA
mA

1.0 0.5 A

MBR2035CT - MBR2060CT, Rev. C2001 Fairchild Semiconductor Corporation

T ypical Characteristics

MBR2035CT-MBR2060CT

Schottky Rectifier

(continued)

20

[A]

F

16

12

SINGLE PHASE
HALF WAVE

8

60HZ
RESISTIVE OR
INDUCTIVE LOAD

4

.375" (9.00mm) LOAD
LENGTHS

0

0 25 50 75 100 125 150 175

Average Rectified Forward Current, I

Ambient Temperature [ºC]

150

[A]

125

FSM

100

75

50

25

0

12 51020 50100

Peak Forward Surge Current, I

Number of Cycles at 60Hz

Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current

50

º

T = 25 C

A

[A]

F

10

º

T = 150 C

A

MBR2035CT-MBR2045C T

1

MBR2050CT-MBR2060CT

0.1

Forward Current, I

0.01
0 0.2 0.4 0.6 0.8 1 1.2

Pulse Width = 300
2% Duty Cycle

µµµµ

S

Forward Voltage, VF [V]

Figure 3. Forward Voltage Characteristics

50

MBR2035CT-MBR2045CT

10

[mA]

R

1

MBR2050CT-MBR2060CT

0.1

MBR2035CT-MBR2045CT

0.01

Reverse Current, I

0.001
0 20406080100120140

MBR2050CT-MBR2060CT

º

T = 125 C

A

º

T = 75 C

A

º

T = 25 C

A

Percent of Rated Peak Reverse Voltage [%]

Figure 4. Reverse Current vs Reverse Voltage

5000

2000

[pF]

T

1000

500

MBR2050CT-MBR2060CT

MBR2035CT-MBR2045CT

200

Total Capacitance, C

100

0.1 1 10 100

Reverse Voltage, VR [V]

Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics

100

10

1

Transient Thermal Impedance [ºC/W]

0.1

0.01 0.1 1 10 100

Pulse Duration [s]

MBR2035CT - MBR2060CT, Rev. C2001 Fairchild Semiconductor Corporation