Fairchild MBR2035CT, MBR2045CT, MBR2050CT, MBR2060CT service manual

MBR2035CT - MBR2060CT
Features
Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
Schottky Rectifiers
1
2
3
TO-220AB
PIN 1
PIN 3
+
CASE PIN 2
MBR2035CT-MBR2060CT
Absolute Maximum Ratings* T
Symbol
V
Maximum Repetitive Reverse Voltage 35 45 50 60 V
RRM
I
Average Rectified Forward Current
F(AV)
I
Non-repet itive Peak Forward Surge Current
FSM
T
stg
TJ Operating Junction Temperature -65 to +150
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175
Parameter
= 135°C
A
= 25°C unless otherwise noted
A
2035CT 2045CT 2050CT 2060CT
Value
Units
20 A
150 A
°C
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD Power Dissipation 2.0 W R
JA
θ
R
JL
θ
Thermal Resistance, Junction to Ambient * 60 Thermal Resistance, Junction to Lead 2.0
Symbol
VF
IR
I
RRM
Forward Voltage I
Reverse Current @ rated V
Peak Repetitive Reverse Surge Current
2.0 us Pulse Width, f = 1.0 KHz
Parameter
Parameter
10 A, TC = 25°C
F =
10 A, TC = 125°C
I
F =
I
20 A, TC = 25°C
F =
20 A, TC = 125°C
I
F =
R TA
T
= 25°C unless otherwise noted
A
= 25°C = 125°C
A
Value
Device
2035CT 2045CT 2050CT 2060CT
-
0.57
0.84
0.72
0.1 15
0.80
0.70
0.95
0.85
0.15 150
Units
C/W
°
C/W
°
Units
V V V V
mA mA
1.0 0.5 A
MBR2035CT - MBR2060CT, Rev. C2001 Fairchild Semiconductor Corporation
T ypical Characteristics
MBR2035CT-MBR2060CT
Schottky Rectifier
(continued)
20
[A]
F
16
12
SINGLE PHASE HALF WAVE
8
60HZ RESISTIVE OR INDUCTIVE LOAD
4
.375" (9.00mm) LOAD LENGTHS
0
0 25 50 75 100 125 150 175
Average Rectified Forward Current, I
Ambient Temperature [ºC]
150
[A]
125
FSM
100
75
50
25
0
12 51020 50100
Peak Forward Surge Current, I
Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
50
º
T = 25 C
A
[A]
F
10
º
T = 150 C
A
MBR2035CT-MBR2045C T
1
MBR2050CT-MBR2060CT
0.1
Forward Current, I
0.01 0 0.2 0.4 0.6 0.8 1 1.2
Pulse Width = 300 2% Duty Cycle
µµµµ
S
Forward Voltage, VF [V]
Figure 3. Forward Voltage Characteristics
50
MBR2035CT-MBR2045CT
10
[mA]
R
1
MBR2050CT-MBR2060CT
0.1
MBR2035CT-MBR2045CT
0.01
Reverse Current, I
0.001 0 20406080100120140
MBR2050CT-MBR2060CT
º
T = 125 C
A
º
T = 75 C
A
º
T = 25 C
A
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
5000
2000
[pF]
T
1000
500
MBR2050CT-MBR2060CT
MBR2035CT-MBR2045CT
200
Total Capacitance, C
100
0.1 1 10 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
100
10
1
Transient Thermal Impedance [ºC/W]
0.1
0.01 0.1 1 10 100
Pulse Duration [s]
MBR2035CT - MBR2060CT, Rev. C2001 Fairchild Semiconductor Corporation
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