Fairchild MBR20200CT service manual
MBR20200CT
Dual High Voltage Schottky Rectifier
Features
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• RoHS Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C
• Wave Soldering or per MIL-STD-750 Method 2026.
1 2 3
Mark : MBR20200CT
1. Anode
3. Anode
November 2010
2. and Tab Cathode
MBR20200CT — Dual High Voltage Schottky Rectifier
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Unit
V
RRM
V
R
I
F(AV)
I
FSM
T
STG
T
J
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* T
Maximum Repetitive Reverse Voltage 200 V
Maximum DC Reverse Voltage 200 V
Average Rectified Forward Current, TC=115°C
10 (Per Leg)
20 (Per Device)
Peak Forward Surge Current, 8.3mS Half Sine wave 150 A
Storage Temperature Range -55 to +150 °C
Operating Junction Temperature 150 °C
= 25°C unless otherwise noted
a
A
Symbol Parameter Max. Unit
R
θJC
R
θJA
* MIL standard 883-1012 & JESD51-10
Electrical Characteristics* T
Thermal Resistance, Junction to Case per Leg 1.5 °C/W
Thermal Resistance, Junction to Ambient per Leg 62.5 °C/W
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Max. Unit
= 2 0 0 V
V
I
R
V
F
Reverse Current
Forward Voltage
R
= 2 0 0 V
V
R
= 10A
I
F
= 10A
I
F
= 20A
I
F
= 20A
I
F
* DC Item are tested by Pulse Test : Pulse Width≤300
T
= 25 °C
C
= 125 °C
T
C
T
= 25 °C
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
T
C
μs, Duty Cycle≤2%
0.2
5
0.9
0.8
1.0
0.9
mA
V
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20200CT Rev. A2 1
Typical Performance Characteristics
Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current
MBR20200CT — Dual High Voltage Schottky Rectifier
1000
10
[A]
F
1
0.1
Forward Current, I
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
100
[uA]
R
10
1
0.1
Reverse Current, I
0.01
1E-3
50 100 150 200
TJ=125 oC
TJ=75 oC
Reverse Voltage, VR[V]
Figure 3.Junction Capacitance Figure 4. Power Derating
1
0.9
[nF]
J
0.8
0.7
0.6
0.5
0.4
0.3
0.2
f=1mhz
Juntion Capacitance, C
0.1
0246810
Reverse Voltage, VR[V]
30
[A]
25
F(AV)
20
15
10
5
Average Forward Current, I
0
0 25 50 75 100 125 150
DC
Case Temperature, TC[oC]
TJ=25 oC
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20200CT Rev. A2 2
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