Fairchild MBR1035, MBR1045, MBR1050, MBR1060 service manual
MBR1035 - MBR1060
Schottky Rectifiers
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications.
• Metal silicon junction, majority carrier conduction
• High current capacity, low forward voltage drop
• Guard ring for over voltage protection.
1
2
TO-220AC
PIIN1
PIIN2
June 2012
Case
MBR1035 - MBR1060 — Schottky Rectifiers
Absolute Maximum Ratings* T
Symbol Parameter
V
RRM
I
F(AV)
I
FSM
T
T
Maximum Repetitive Reverse Voltage 35 45 50 60 V
Average Rectified Forward Current 10 A
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175 °C
stg
Operating Junction Temperature -65 to +150 °C
J
= 25°C unless otherwise noted
a
1035 1045 1050 1060
Value
150 A
Units
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol Parameter Value Units
P
R
R
Electrical Characteritics
Symbol Parameter
V
I
RRM
Power Dissipation 2.0 W
D
Thermal Resistance, Junction to Ambient 60 °C/W
θJA
Thermal Resistance, Junction to Lead 2.0 °C/W
θJL
Ta = 25°C unless otherwise noted
Value
1035 1045 1050 1060
Forward Voltage IF = 10A, TC = 25°C
F
IF = 10A, TC = 125°C
IF = 20A, TC = 25°C
I
I
Reverse Current @ rated V
R
= 20A, TC = 125°C
F
T
Peak Repetitive Reverse Surge Current
2.0μs Pulse Width, f = 1.0 KHz
R TC
= 25°C
= 125°C
C
-
0.57
0.84
0.72
0.1
15
1.0 0.5 A
0.80
0.70
0.95
0.85
Units
mA
mA
V
V
V
V
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR1035 - MBR1060 Rev. D0 1
Typical Performance Characteristics
MBR1035 - MBR1060 — Schottky Rectifiers
12
[A]
F
10
8
MBR1035-MBR1045
SINGLE PHASE
6
HALF WAVE
60HZ
4
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.00mm) LOAD
2
LENGTHS
0
0 25 50 75 100 125 150 175
Average Rectified Forward Current, I
MBR1050-MBR1060
Ambient Temperature [ºC]
Figure 1. Forward Current Derating Curve
50
º
T = 25 C
A
[A]
F
10
º
T = 150 C
A
MBR1035-MBR1045
1
MBR1050-MBR1060
0.1
Forward Current, I
0.01
0 0.2 0.4 0.6 0.8 1 1.2
Pulse Width = 300
2% Dut y Cy cle
μμμμ
S
Forward Voltage, VF [V]
Figure 3. Forward Voltage Characteristics
175
[A]
150
FSM
125
100
75
50
25
0.1 1 10 100
Peak Forward Surge Current, I
Number of Cycles at 60Hz
Figure 2. Non-Repetitive Surge Current
20
MBR1035-MBR1045
10
T = 125 C
º
A
[mA]
1
R
Reverse Current, I
0.001
MBR1050-MBR1060
º
T = 75 C
0.1
0.01
MBR1035-MBR1045
MBR1050-MBR1060
A
º
T = 25 C
A
0 20406080100120
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
5000
100
º
2000
[pF]
T
1000
500
MBR1035-MBR1045
MBR1050-MBR1060
10
1
200
Total Capacitance, C
100
0.1 1 10 100
Reverse Voltage, VR [V]
0.1
0.01 0.1 1 10 100
Transient Thermal Impedance [ºC/W]
Pulse Duration [s]
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR1035 - MBR1060 Rev. D0 2
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