Fairchild FDMC8651 service manual

FDMC8651

N-Channel Power Trench® MOSFET

30 V, 20 A, 6.1 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 6.1 mΩ at VGS = 4.5 V, ID = 15 A

DS(on)

= 9.3 mΩ at VGS = 2.5 V, ID = 12 A

DS(on)

General Description

This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low
provide a sub logic-level device.

Applications

 Synchronous rectifier
 3.3 V input synchronous buck switch

r

has been maintained to

DS(on)

FDMC8651 N-Channel Power Trench

July 2008

®

MOSFET

Top

D

Bottom

Pin 1

S

S

S

G

D

D

D

5

D
D

6

D

7

8

D

4

3

2

1

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage ±12 V
Drain Current -Continuous (Package limited) TC = 25 °C 20

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 128 mJ
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 64

C

= 25 °C (Note 1a) 15

A

= 25 °C (Note 1a) 2.3

A

Thermal Characteristics

G

S

S

S

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8651 FDMC8651 Power 33 13 ’’ 12 mm 3000 units

©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C

°C/W

1

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FDMC8651 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = ±12 V, V

ID = 250 µA, referenced to 25 °C 27.5 mV/°C

= 0 V 1 µA

GS

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 0.8 1.1 1.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 15 A 91 S

ID = 250 µA, referenced to 25 °C -4.4 mV/°C
VGS = 4.5 V, ID = 15 A 4.3 6.1

VGS = 4.5 V , ID = 15 A, TJ = 125 °C 6.3 9.0

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 865 1150 pF
Reverse Transfer Capacitance 140 205 pF

VDS = 15 V, VGS = 0 V,
f = 1 MHz

2530 3365 pF

Gate Resistance 0.8 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 9 18 ns
Turn-Off Delay Time 35 56 ns

VDD = 15 V, ID = 15 A,
VGS = 4.5 V, R

GEN

= 6 Ω

18 31 ns

Fall Time 6 12 ns
Total Gate Charge at 4.5 V
Total Gate Charge 4.8 nC

VDD = 15 V, ID = 15 A

19.4 27.2 nC

Gate to Drain “Miller” Charge 4.2 nC

mΩVGS = 2.5 V, ID = 12 A 6.2 9.3

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mat erial . R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. Starting T

©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 17 30 nC

= 25 °C; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V.

J

a.

53 °C/W when mounted on a

2

pad of 2 oz copper

1 in

V

= 0 V, IS = 15 A (Note 2) 0.8 1.3

GS

V

= 0 V, IS = 1.7 A (Note 2) 0.7 1.2

GS

IF = 15 A, di/dt = 100 A/µs

θJC

2

35 55 ns

is guaranteed by design while R

125 °C/W when mounted on

b.

a minimum pad of 2 oz copper

V

is determined by

θCA

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FDMC8651 N-Channel Power Trench

Typical Characteristics T

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

0.0 0.5 1.0 1.5 2.0

Figure 1.

1.8

ID = 15 A
V

GS

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

Figur e 3 . Norm alize d O n- Res is tance

VGS = 2.5 V

VGS = 4.5 V

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX

On-Region Characteristics Figure 2.

= 4.5 V

T

,

JUNCTION TEMPERATURE

J

vs Junction Temperature

= 25 °C unless otherwise noted

J

VGS = 2.2 V

VGS = 2 V

VGS = 1.8 V

o

(

C

)

6

PULSE DURATION = 80 µs

5

VGS = 1.8 V

DUTY CYCLE = 0.5% MAX

VGS = 2 V

4

V

= 2.2 V

GS

3

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0

0 102030405060

I

,

DRAIN CURRENT (A)

D

V

GS

V

GS

Nor ma liz ed O n- Res ist an ce

vs Drain Current and Gate Voltage

20

)

Ω

m

(

15

10

DRAIN TO

,

DS(on)

r

5

SOURCE ON-RESISTANCE

0

1.5 2.0 2.5 3.0 3.5 4.0 4.5

V

GS

Figure 4.

On-Resistan ce vs Gat e to

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

ID = 15 A

TJ = 125 oC

TJ = 25 oC

,

GATE TO SO U RCE VOLTAGE (V)

Source Voltage

= 2.5 V

= 4.5 V

®

MOSFET

60

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

50

V

= 5 V

DS

40

30

TJ = 150 oC

20

, DRAIN CURRENT (A)

D

I

10

0

0.5 1.0 1.5 2.0 2.5 3.0

VGS, GATE TO SOURCE VOLTA GE (V)

Figure 5. Transfer Characteristics

©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C

60

V

= 0 V

GS

10

TJ = 150 oC

1

TJ = 25 oC

0.1

TJ = 25 oC

TJ = -55 oC

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Di ode

TJ = -55 oC

Forward Voltage vs Source Current

3

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