FDMC8651
N-Channel Power Trench® MOSFET
30 V, 20 A, 6.1 mΩ
Features
Max r
Max r
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
= 6.1 mΩ at VGS = 4.5 V, ID = 15 A
DS(on)
= 9.3 mΩ at VGS = 2.5 V, ID = 12 A
DS(on)
General Description
This device has been designed specifically to improve the
efficiency of DC/DC converters. Using new techniques in
MOSFET construction, the various components of gate charge
and capacitance have been optimized to reduce switching
losses. Low gate resistance and very low Miller charge enable
excellent performance with both adaptive and fixed dead time
gate drive circuits. Very low
provide a sub logic-level device.
Applications
Synchronous rectifier
3.3 V input synchronous buck switch
r
has been maintained to
DS(on)
FDMC8651 N-Channel Power Trench
July 2008
®
MOSFET
Top
D
Bottom
Pin 1
S
S
S
G
D
D
D
5
D
D
6
D
7
8
D
4
3
2
1
Power 33
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±12 V
Drain Current -Continuous (Package limited) TC = 25 °C 20
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 128 mJ
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 64
C
= 25 °C (Note 1a) 15
A
= 25 °C (Note 1a) 2.3
A
Thermal Characteristics
G
S
S
S
A
W
R
θJC
R
θJA
Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8651 FDMC8651 Power 33 13 ’’ 12 mm 3000 units
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
°C/W
1
www.fairchildsemi.com
FDMC8651 N-Channel Power Trench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = ±12 V, V
ID = 250 µA, referenced to 25 °C 27.5 mV/°C
= 0 V 1 µA
GS
= 0 V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 0.8 1.1 1.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = 5 V, ID = 15 A 91 S
ID = 250 µA, referenced to 25 °C -4.4 mV/°C
VGS = 4.5 V, ID = 15 A 4.3 6.1
VGS = 4.5 V , ID = 15 A, TJ = 125 °C 6.3 9.0
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 865 1150 pF
Reverse Transfer Capacitance 140 205 pF
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2530 3365 pF
Gate Resistance 0.8 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 9 18 ns
Turn-Off Delay Time 35 56 ns
VDD = 15 V, ID = 15 A,
VGS = 4.5 V, R
GEN
= 6 Ω
18 31 ns
Fall Time 6 12 ns
Total Gate Charge at 4.5 V
Total Gate Charge 4.8 nC
VDD = 15 V, ID = 15 A
19.4 27.2 nC
Gate to Drain “Miller” Charge 4.2 nC
mΩVGS = 2.5 V, ID = 12 A 6.2 9.3
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mat erial . R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting T
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 17 30 nC
= 25 °C; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V.
J
a.
53 °C/W when mounted on a
2
pad of 2 oz copper
1 in
V
= 0 V, IS = 15 A (Note 2) 0.8 1.3
GS
V
= 0 V, IS = 1.7 A (Note 2) 0.7 1.2
GS
IF = 15 A, di/dt = 100 A/µs
θJC
2
35 55 ns
is guaranteed by design while R
125 °C/W when mounted on
b.
a minimum pad of 2 oz copper
V
is determined by
θCA
www.fairchildsemi.com
FDMC8651 N-Channel Power Trench
Typical Characteristics T
60
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
1.8
ID = 15 A
V
GS
1.6
1.4
1.2
1.0
NORMALIZED
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
Figur e 3 . Norm alize d O n- Res is tance
VGS = 2.5 V
VGS = 4.5 V
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
PULSE DURA TION = 80 µs
DUTY CYCLE = 0.5% MAX
On-Region Characteristics Figure 2.
= 4.5 V
T
,
JUNCTION TEMPERATURE
J
vs Junction Temperature
= 25 °C unless otherwise noted
J
VGS = 2.2 V
VGS = 2 V
VGS = 1.8 V
o
(
C
)
6
PULSE DURATION = 80 µs
5
VGS = 1.8 V
DUTY CYCLE = 0.5% MAX
VGS = 2 V
4
V
= 2.2 V
GS
3
2
NORMALIZED
1
DRAIN TO SOURCE ON-RESISTANCE
0
0 102030405060
I
,
DRAIN CURRENT (A)
D
V
GS
V
GS
Nor ma liz ed O n- Res ist an ce
vs Drain Current and Gate Voltage
20
)
Ω
m
(
15
10
DRAIN TO
,
DS(on)
r
5
SOURCE ON-RESISTANCE
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
GS
Figure 4.
On-Resistan ce vs Gat e to
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 15 A
TJ = 125 oC
TJ = 25 oC
,
GATE TO SO U RCE VOLTAGE (V)
Source Voltage
= 2.5 V
= 4.5 V
®
MOSFET
60
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
50
V
= 5 V
DS
40
30
TJ = 150 oC
20
, DRAIN CURRENT (A)
D
I
10
0
0.5 1.0 1.5 2.0 2.5 3.0
VGS, GATE TO SOURCE VOLTA GE (V)
Figure 5. Transfer Characteristics
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
60
V
= 0 V
GS
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = 25 oC
TJ = -55 oC
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Di ode
TJ = -55 oC
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC8651 N-Channel Power Trench
Typical Characteristics T
4.5
4
V
ID = 15 A
3
2
1
, GATE TO SOURCE VOLTAGE (V)
GS
V
0
04812162024
Figure 7.
Gate Charge Characteristics Figure 8.
30
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100 300
tAV, TIME IN AVALA NCHE (ms)
Figure 9.
Switching Capability
= 10 V
DD
VDD = 15 V
Qg, GATE CHARGE (nC)
TJ = 125 oC
TJ = 25 oC
Unc l amp ed I ndu c tiv e
= 25 °C unless otherwise noted
J
VDD = 20 V
TJ = 100 oC
5000
1000
CAPACITANCE (pF)
f = 1 MHz
100
V
= 0 V
GS
50
0.1 1 10 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Cap aci tan ce v s Dr ain
to Source Voltage
65
52
V
= 4.5 V
GS
39
V
= 2.5 V
GS
26
DRAIN CURRENT (A)
,
D
I
13
Limited by Package
0
25 50 75 100 125 150
T
,
CASE TEMPERATURE
C
Figure 10.
Maximum Cont in uo us Drain
R
θ
JC
= 3 oC/W
o
(
C
Current vs Ca se Tem perat ure
C
iss
C
oss
C
rss
®
MOSFET
)
100
10
1
, DRAIN CURRENT (A)
I
THIS AREA IS
LIMITED BY r
0.1
D
0.01
0.01 0.1 1 10 100
Figure 11.
DS(on)
SINGLE PULSE
= MAX RATED
T
J
= 125 oC/W
R
θ
JA
= 25 oC
T
A
VDS, DRAIN to SOURCE VOLTAGE (V)
Forward Bias Safe
Operating Area
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
2000
1000
SINGLE PULSE
R
= 125 oC/W
θ
JA
= 25 oC
T
A
1 ms
10 ms
100 ms
VGS = 10 V
100
10
1 s
10 s
DC
PEAK TRANSIENT POWER (W)
,
)
1
PK
(
P
0.5
10-410-310-210
Figure 12.
-1
t, PULSE WIDTH (sec)
110
100 1000
Si ngle Pul se Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC8651 N-Channel Power Trench
Typical Characteristics T
2
NORMALIZED THERMAL
JA
θ
Z
IMPEDANCE,
0.0001
1
0.1
0.01
1E-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-4
10
-3
10
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
SINGLE PULSE
R
θ
JA
= 25 °C unless otherwise noted
J
= 125 oC/W
-2
10
t, RECTANGULAR PULSE DURATION (sec)
-1
10
P
DM
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
θJA
1/t2
x R
110
t
1
t
2
+ T
θJA
A
100 1000
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
5
www.fairchildsemi.com
Dimensional Outline and Pad Layout
FDMC8651 N-Channel Power Trench
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDMC8651 Rev.C
6
www.fairchildsemi.com
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tm
tm
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FDMC8651 N-Channel Power Trench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sust ain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experiencing count erfeiting of their
parts. Customers who inadvertently purchase counte rfe it par ts e xperience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to prot ect oursel ve s and our customers from the
proliferation of counterfeit parts. Farichild st rongly encourages customer s to purch ase Farichild p arts either directly from Fa irchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2008 Fairchild Semiconductor Corporation
Datasheet contains the design specifications for prod uct development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
7
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FDMC8651 Rev.C
Rev. I35
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