Datasheet FDMC7660S Datasheet (Fairchild)

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FDMC7660S

N-Channel Power Trench® SyncFET

30 V, 20 A, 2.2 mΩ

Features

 Max r  Max r  High performance technology for extremely low r  Termination is Lead-free and RoHS Compliant

= 2.2 mΩ at VGS = 10 V, ID = 20 A

DS(on)

= 2.95 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

™

General Description

The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest r performance. This device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Notebook Vcore/GPU low side switch  Networking Point of Load low side switch  Telecom secondary side rectification

DS(on)

FDMC7660S N-Channel Power Trench

December 2009

while maintaining excellent switching

SyncFET

Pin 1

Bottom

4 3 2 1

Top

Power 33

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 128 mJ Power Dissipation 41 Power Dissipation (Note 1a) 2.3 Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 100

= 25 °C (Note 1a) 20

Thermal Characteristics

™

θJC

θJA

Thermal Resistance, Junction to Case 3 Thermal Resistance, Junction to Ambient (Note 1a) 53

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC7660S FDMC7660S Power 33 13 ’’ 12 mm 3000 units

°C/W

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FDMC7660S N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆BV

DSS

∆T

DSS

GSS

On Characteristics

GS(th)

∆V

GS(th)

∆T

DS(on)

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V Gate to Source Leakage Current VGS = 20 V, V

= 1 mA, referenced to 25 °C 13 mV/°C

= 0 V 500 µA

= 0 V 100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 2.5 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 5 V, ID = 20 A 129 S

= 1 mA, referenced to 25 °C -3 mV/°C

= 10 V, ID = 20 A 1.7 2.2

= 4.5 V, ID = 18 A 2.5 2.95

VGS = 10 V, ID = 20 A, TJ = 125 °C 2.2 3.1

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1260 1680 pF Reverse Transfer Capacitance 105 160 pF

= 15 V, VGS = 0 V,

f = 1 MHz

3250 4325 pF

Gate Resistance 0.8 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 5 10 ns Turn-Off Delay Time 34 54 ns

= 15 V, ID = 20 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 3.9 10 ns Total Gate Charge VGS = 0 V to 10 V Total Gate Charge V Total Gate Charge 9.5 nC

= 0 V to 4.5 V 21 29 nC

= 20 A

= 15 V

Gate to Drain “Miller” Charge 5 nC

14 25 ns

47 66 nC

mΩV

SyncFET

™

Drain-Source Diode Characteristics

= 0 V, IS = 20 A (Note 2) 0.8 1.2

NOTES:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mat erial . R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.

3. Starting TJ = 25oC; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 39 62 nC

a. 53°C/W when mounted on a 1 i n2 pad o f 2 oz c o pper

= 0 V, IS = 1.9 A (Note 2) 0.4 0.7

= 20 A, di/dt = 300 A/µs

31 50

is guaranteed by design while R

θJC

b. 125°C/W when mounted on a minimum pad of 2 oz copper

is determined by

θCA

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FDMC7660S N-Channel Power Trench

Typical Characteristics T

200

VGS = 10 V

150

100

DRAIN CURRENT (A)

0.0 0.5 1.0 1.5 2.0 2.5

Figure 1.

1.6

ID = 20 A

= 10 V

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

Figure 3. N o r m a l i z ed On- Resista n c e

vs Junction Temperature

VGS = 6 V

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

VGS = 3 V

DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

On-Region Characteristics Figure 2.

JUNCTION TEMPERATURE

= 25 °C unless otherwise noted

(

)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 3.5 V

NORMALIZED

VGS = 4 V

DRAIN TO SOURCE ON-RESISTANCE

0 50 100 150 200

VGS = 4.5 V

DRAIN CURRENT (A)

VGS = 6 V

VGS = 10 V

Norm a l i zed O n - R esis t a n ce

vs Drain Current and Gate Voltage

)

Ω

(

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

Figure 4.

TJ = 25 oC

GATE TO SOURCE VOLTAGE (V)

On-R esistance vs Gate to

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% M AX

ID = 20 A

TJ = 125 oC

Source Voltage

SyncFET

™

200

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

150

= 5 V

100

, DRAIN CURRENT (A)

1234

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 125 oC

Figure 5. Transfer Characteristics

TJ = 25 oC

TJ = -55 oC

200 100

= 0 V

TJ = 125 oC

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

TJ = -55 oC

Source to Drain Diode

Forward Voltage vs Source Current

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FDMC7660S N-Channel Power Trench

Typical Characteristics T

= 25 °C unless otherwise noted

ID = 20 A

VDD = 15 V

= 10 V

VDD = 20 V

, GATE TO SOURCE VOLTAGE (V)

0 1020304050

Figure 7.

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

TJ = 25 oC

, AVALANCHE CURRENT (A)

0.01 0.1 1 10 100 1000

Figure 9.

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

Un c l a m p ed I n d u c ti v e

TJ = 100 oC

Switching Capability

10000

iss

1000

oss

CAPACITANCE (pF)

100

f = 1 MHz V

= 0 V

0.1 1 10 30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Cap a c it a n ce v s D ra i n

to Source Voltage

rss

SyncFET

150

= 3 oC/W

120

DRAIN CURRENT (A)

Limited by Package

25 50 75 100 125 150

Figure 10.

= 10 V

= 4.5 V

CASE TEMPERATURE

(

)

Max i m u m C o n t i n u o u s D rain

™

Cu r rent vs A m bient Te m peratur e

500

100

THIS AREA IS

LIMITED BY r

SINGLE PULSE

, DRAIN CURRENT (A)

0.01

0.1

0.01 0.1 1 10 100

Figure 11.

DS(on)

= MAX RATED

= 125 oC/W

= 25 oC

VDS, DRAIN to SOURCE VOLTAGE (V)

Forward Bias Safe

Operating Area

3000 1000

100 us

1 ms

10 ms 100 ms

1 s 10 s

100

PEAK TRANSIENT POWER (W)

)

(

0.5 10-410-310-210

Figure 12.

-1

t, PULSE WIDTH (sec)

Si ngle Pulse Maxim um

SINGLE PULSE R

= 25 oC

110

= 125 oC/W

100 1000

Power Dissipation

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FDMC7660S N-Channel Power Trench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

D = 0.5

0.2

0.1

0.01

0.05

0.02

0.01

SINGLE PULSE R

= 125 oC/W

θJA

-4

-3

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

NORMALIZED THERMAL

θJA

IMPEDANCE,

0.001

0.0001

= 25 °C unless otherwise noted

-2

t, RECTANGULAR PULSE DURATION (sec)

-1

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

1/t2

x R

θJA

110

+ T

100 1000

SyncFET

™

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Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics

FDMC7660S N-Channel Power Trench

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDMC7660S.

di/dt = 300 A/µs

CURRENT (A)

-5 0 50 100 150 200

TIME (ns)

Figure 14. FDMC7660S SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

-1

-2

-3

-4

-5

, REVERSE LEAKAGE CURRENT (A)

-6

DSS

0 5 10 15 20 25 30

VDS, REVERSE VOLTAGE (V)

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

Figure 15. SyncFET body diode reverse leakage versus drain-source voltage

SyncFET

™

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Dimensional Outline and Pad Layout

FDMC7660S N-Channel Power Trench

SyncFET

™

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Page 8

TRADEMARKS

The following includes registered and unregistered trademarks an d service marks, owned by Fairchil d Semiconductor and/or it s global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED EcoSPARK EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™

FlashWriter FPS™ F-PFS™ FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconduct or.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDMC7660S N-Channel Power Trench

SyncFET

™

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Pr oduct Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; su pplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I44