Datasheet FDMC2514SDC Datasheet (Fairchild)

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Page 1

FDMC2514SDC

Top

Power 33

Bottom

Pin 1

4 3 2 1

5 6 7 8

D D

N-Channel Dual CoolTM PowerTrench® SyncFET

25 V, 40 A, 3.5 mΩ

Features

 Dual CoolTM Top Side Cooling PQFN package  Max r  Max r  High performance technology for extremely low r

 SyncFET Schottky Body Diode  RoHS Compliant

= 3.5 mΩ at VGS = 10 V, ID = 22.5 A

DS(on)

= 4.7 mΩ at VGS = 4.5 V, ID = 18 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and Dual Cool technologies have been combined to offer the lowest r while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation Vcore Low Side

October 2010

process.

package

DS(on)

FDMC2514SDC N-Channel Dual Cool

PowerTrench

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

dv/dt Peak Diode Recovery dv/dt (Note 5) 2.0 V/ns P

, T

STG

Drain to Source Voltage 25 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 40

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200 Single Pulse Avalanche Energy (Note 3) 84 mJ

Power Dissipation TC = 25 °C 60 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25°C unless otherwise noted

= 25 °C 106

= 25 °C (Note 1a) 24

= 25 °C (Note 1a) 3.0

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

2514S FDMC2514SDC Dual Cool

Power 33 13’’ 12 mm 3000 units

°C/W

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Page 2

FDMC2514SDC N-Channel Dual Cool

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

= 10 mA, referenced to 25 °C 21 mV/°C

= 0 V 500 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.7 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 10 mA, referenced to 25 °C -5 mV/°C

= 10 V, ID = 22.5 A 2.5 3.5

= 4.5 V, ID = 18 A 3.6 4.7

= 10 V, ID = 22.5 A, TJ = 125 °C 3.5 4.5

Forward Transconductance VDS = 5 V, ID = 22.5 A 122 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 596 795 pF Reverse Transfer Capacitance 134 205 pF

= 13 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 1.1 2.4 Ω

2031 2705 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On Delay Time Rise Time 3.6 10 ns Turn-Off Delay Time 26 41 ns

= 13 V, ID = 22.5 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 310ns

g g gs gd

Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 14 20 nC Gate to Source Gate Charge 6.5 nC

= 13 V,

= 22.5 A

Gate to Drain “Miller” Charge 3.9 nC

11 22 ns

31 44 nC

mΩV

PowerTrench

SyncFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 19 34 nC

= 0 V, IS = 22.5 A (Note 2) 0.79 1.2

= 0 V, IS = 2 A (Note 2) 0.47 0.8

= 22.5 A, di/dt = 300 A/μs

24 39 ns

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Page 3

Thermal Characteristics

FDMC2514SDC N-Channel Dual Cool

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 5.8 Thermal Resistance, Junction to Case (Bottom Drain) 2.1 Thermal Resistance, Junction to Ambient (Note 1a) 42 Thermal Resistance, Junction to Ambient (Note 1b) 105 Thermal Resistance, Junction to Ambient (Note 1c) 29 Thermal Resistance, Junction to Ambient (Note 1d) 40 Thermal Resistance, Junction to Ambient (Note 1e) 19 Thermal Resistance, Junction to Ambient (Note 1f) 23 Thermal Resistance, Junction to Ambient (Note 1g) 30 Thermal Resistance, Junction to Ambient (Note 1h) 79 Thermal Resistance, Junction to Ambient (Note 1i) 17 Thermal Resistance, Junction to Ambient (Note 1j) 26 Thermal Resistance, Junction to Ambient (Note 1k) 12 Thermal Resistance, Junction to Ambient (Note 1l) 16

a. 42 °C/W when mounted on a 1 in2 pad of 2 oz copper

is guaranteed by design while R

θJC

b. 105 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

PowerTrench

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E

of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.

5. ISD ≤ 22.5 A, di/dt ≤ 200 A/μs, VDD ≤ BV

, Starting TJ = 25 oC.

DSS

pad of 2 oz copper

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Page 4

FDMC2514SDC N-Channel Dual Cool

012345

120

VGS = 3.5 V

VGS = 4.5 V

VGS = 10 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 2.5 V

VGS = 3 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 306090120

VGS = 4.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 3 V

VGS = 3.5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

ID = 22.5 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTAN CE

, JUNCTION TEMPERATUR E (

246810

TJ = 125 oC

ID = 22.5 A

TJ = 25 oC

, GATE TO SOURCE VOLTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

120

TJ = 125 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics

= 25 °C unless otherwise noted

Figure 2.

Norma liz ed On- Re sis ta nce

vs Drain Current and Gate Voltage

PowerTrench

SyncFET

Fi gure 3 . N or maliz ed On - Resi st ance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

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Page 5

FDMC2514SDC N-Channel Dual Cool

0 4 8 121620242832

= 22.5 A

VDD = 16 V

= 10 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 13 V

0.1 1 10

100

1000

3000

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOL TAGE (V)

rss

oss

iss

0.01 0.1 1 10 100

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

120

Limited by Package

= 4.5 V

θJC

= 2.1 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.01 0.1 1 10 100

0.01

0.1

100

300

1ms

10 ms

100 ms

10 s

1 s

100 us

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS A REA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 105

C/W

= 25

10-410-310-210

-1

110

100 1000

0.5

100

1000

2000

(PK)

, PEAK TRANSIENT POWER (W)

SINGLE PULSE R

θJA

= 105 oC/W

= 25 oC

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

Cap aci tan ce v s D r ai n

to Source Voltage

PowerTrench

SyncFET

Figure 9.

Unc l am p ed I ndu c tiv e

Switching Capability

Figure 11.

Operating Area

Forward Bias Safe

Figur e 10. M aximu m Continuous Drain

Current vs Case Temperature

Figure 12. Si ngl e Pulse Maximum

Power Dissipation

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Page 6

FDMC2514SDC N-Channel Dual Cool

-4

-3

-2

-1

110

100 1000

0.0005

0.001

0.01

0.1

SINGLE PULSE R

θJA

= 105 oC/W

DUTY CYCLE-DESCENDING ORDER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PULSE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t

1/t2

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

PowerTrench

SyncFET

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Page 7

Typical Characteristics (continued)

0 5 10 15 20 25

-6

-5

-4

-3

-2

TJ = 125 oC

TJ = 100 oC

TJ = 25 oC

DSS

, REVERSE LEAKAGE CURRENT (A)

VDS, REVERSE VOLTAGE (V)

0 50 100 150 200

-5

di/dt = 300 A/μs

CURRENT (A)

TIME (ns)

SyncFET Schottky body diode Characteristics

FDMC2514SDC N-Channel Dual Cool

Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverse recovery characteristic of the FDMC2514SDC.

Figure 14. FDMC2514SDC SyncFET body

diode reverse recovery characteristic

Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

PowerTrench

SyncFET

Figure 15. SyncFET body diode reverse leakage versus drain-source voltage

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Page 8

Dimensional Outline and Pad Layout

FDMC2514SDC N-Channel Dual Cool

PowerTrench

SyncFET

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Page 9

TRADEMARKS

The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconductor and/ or its global subsidiaries, and is no t intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

FAST FastvCore™ FETBench™ FlashWriter

FPS™

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b ) support or su stain life, and (c) whose failure to perform when properly used in acco rdance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experiencin g counterfeiting of their parts. Customers who inadvertently purchase counterfe it parts e xperi en ce many prob lems such a s loss of b rand rep utati on, substa nda rd perf orman ce, fa iled application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect oursel ve s and our customers from the

proliferation of counterfeit parts. Fairch ild strongly encourage s custom ers to purch ase Fairchi ld parts either directly from Fa irchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage o ur customers to do their part in stopping this practice b y buying direct or from authorized dist ributors.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

FDMC2514SDC N-Channel Dual Cool

PowerTrench

SyncFET

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specificatio ns for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinu ed by Fai r child Semiconductor. The datashe et is for reference information only.

Rev. I48

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