Fairchild FDMC86102 service manual

FDMC86102

G

S

S

S

D
D

D

D

5

6

7

8

3

2

1

4

Top

Power 33

Bottom

D

D

D

D

S

S

S

G

Pin 1

N-Channel Power Trench® MOSFET

100 V, 20 A, 24 mΩ

Features

 Max r
 Max r
 Low Profile - 1 mm max in Power 33
 100% UIL Tested

 RoHS Compliant

= 24 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 38 mΩ at VGS = 6 V, ID = 5 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC - DC Conversion

March 2012

®

process that has

FDMC86102 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC86102 FDMC86102 Power 33 13’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMC86102 Rev.C1

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 20

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 53

= 25 °C unless otherwise noted

A

= 25 °C 29

C

= 25 °C (Note 1a) 7

A

= 25 °C (Note 1a) 2.3

A

1

A

W

°C/W

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FDMC86102 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 69 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.1 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 10 V, ID = 7 A 19 S

= 250 μA, referenced to 25 °C -9 mV/°C

I

D

V

= 10 V, ID = 7 A 19.4 24

GS

= 6 V, ID = 5 A 26.8 38

GS

= 10 V, ID = 7 A, TJ = 125 °C 32.8 41

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 175 235 pF
Reverse Transfer Capacitance 15 25 pF

V

= 50 V, VGS = 0 V,

DS

f = 1 MHz

725 965 pF

Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 4 10 ns
Turn-Off Delay Time 14 25 ns

= 50 V, ID = 7 A,

V

DD

= 10 V, R

V

GS

GEN

= 6 Ω
Fall Time 4 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 3.7 nC

= 0 V to 5 V 8 11 nC

GS

V

DD

I

D

= 50 V

= 7 A

Gate to Drain “Miller” Charge 3.6 nC

8 17 ns

13 18 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. Starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 12 A, VDD = 90 V, VGS = 10 V.

FDMC86102 Rev.C1

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 40 65 nC

a.

53 °C/W when mounted on a
1 in2 pad of 2 oz copper

V

= 0 V, IS = 7 A (Note 2) 0.81 1.3

GS

= 0 V, IS = 2 A (Note 2) 0.75 1.2

V

GS

= 7 A, di/dt = 100 A/μs

I

F

2

θJC

44 70

is guaranteed by design while R

125 °C/W when mounted on

b.

a minimum pad of 2 oz copper

V

ns

is determined by

θCA

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FDMC86102 N-Channel Power Trench

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

5

10

15

20

25

30

VGS = 6 V

VGS = 10 V

VGS = 5 V

VGS = 5.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20 25 30

0

1

2

3

4

5

VGS = 6 V

VGS = 4.5 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 5.5 V

VGS = 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERATURE (

o

C)

45678910

10

20

30

40

50

60

70

80

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

234567

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

60

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norm a l i z e d O n-Resist a n c e

vs Drain Current and Gate Voltage

®

MOSFET

Fig u r e 3. N o r maliz e d On- Re s i s tanc e

vs Junction Temperature

FDMC86102 Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance vs Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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