Fairchild FDMC8327L service manual

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FDMC8327L

N-Channel PowerTrench® MOSFET

40 V, 14 A, 9.7 mΩ

FDMC8327L N-Channel PowerTrench

May 2012

Features

 Max r
 Max r

 Low Profile - 0.8mm max in Power 33
 100% UIL test
 RoHS Compliant

= 9.7 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 12.5 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

®

process that has

Application

 DC-DC Conversion

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current - Continuous (Package limited) TC = 25 °C 14

- Continuous (Silicon limited) T

- Continuous T

- Pulsed 60
Single Pulse Avalanche Energy (Note 3) 25 mJ
Power Dissipation TC = 25 °C 30
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 43

C

= 25 °C (Note 1a) 12

A

= 25 °C (Note 1a) 2.3

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMC8327L FDMC8327L Power 33 13 ” 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDMC8327L Rev.C1

Thermal Resistance, Junction to Case (Note 1) 4.2
Thermal Resistance, Junction to Ambient (Note 1a) 53

°C/W

FDMC8327L N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 22 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.7 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -5 mV/°C

D

V

= 10 V, ID = 12 A 7.4 9.7

GS

= 4.5 V, ID = 10 A 9.4 12.5

GS

= 10 V, ID = 12 A, TJ = 125 °C 11 14.5

V

GS

Forward Transconductance VDD = 5 V, ID = 12 A 52 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 347 520 pF
Reverse Transfer Capacitance 21 35 pF
Gate Resistance 0.1 0.6 1.3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g(TOT)
g(TOT)
gs
gd

Turn-On Delay Time
Rise Time 2.2 10 ns
Turn-Off Delay Time 20 32 ns
Fall Time 2.2 10 ns
Total Gate Charge VGS = 0V to 10 V
Total Gate Charge VGS = 0V to 5 V 9.7 14 nC
Gate to Source Charge 3.3 nC
Gate to Drain “Miller” Charge 2.6 nC

= 20 V, VGS = 0 V,

V

DS

f = 1 MHZ

= 20 V, ID = 12 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

VDD = 20 V,
I

= 12 A

D

1235 1850 pF

8.4 17 ns

18.5 26 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

V

SD

t

rr

Q

rr

Notes:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

©2012 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDMC8327L Rev.C1

Source to Drain Diode Forward
Voltage

Reverse Recovery Time
Reverse Recovery Charge 10 20 nC

a.

53 °C/W when mounted on a
1 in2 pad of 2 oz copper

SS

SF

DF

DS

G

= 25 °C; N-ch: L = 0.3 mH, IAS = 13 A, VDD = 36 V, VGS = 10 V.

J

= 0 V, IS = 1.8 A (Note 2) 0.7 1.2

GS

= 0 V, IS = 12 A (Note 2) 0.8 1.3

V

GS

= 12 A, di/dt = 100 A/s

I

F

is guaranteed by design while R

θJC

b.

125 °C/W when mounted on
a minimum pad of 2 oz copper

SF

SS

DS

DF

G

32 51 ns

is determined by

θCA

V

FDMC8327L N-Channel PowerTrench

0.0 0.3 0.6 0.9 1.2 1.5

0

10

20

30

40

50

60

VGS = 6 V

VGS = 3 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

VGS = 4 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 102030405060

0

1

2

3

4

V

GS

= 6 V

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 3 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

ID = 12 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

5

10

15

20

25

30

TJ = 125 oC

ID = 12 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

0

10

20

30

40

50

60

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.00.20.40.60.81.01.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor ma l iz ed O n-R esi sta nc e

vs Drain Current and Gate Voltage

®

MOSFET

Fi gu re 3. Norma li ze d O n R esistance

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDMC8327L Rev.C1

Figure 5. Transfer Characteristics

Figure 4.

On-Res istance vs Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current