FDMC8010
BottomTop
Power 33
Pin 1
Pin 1
G
D
S
S
S
D
D
D
S
S
S
G
D
D
D
D
N-Channel PowerTrench® MOSFET
30 V, 75 A, 1.3 mΩ
FDMC8010 N-Channel PowerTrench
December 2011
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
= 1.3 mΩ at VGS = 10 V, ID = 30 A
DS(on)
= 1.8 mΩ at VGS = 4.5 V, ID = 25 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ultra low
required in small spaces such as High performance VRM, POL
and Oring functions.
®
process that has
r
DS(on)
is
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Oring FET
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMC8010 FDMC8010 Power 33 13 ’’ 12
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
Drain to Source Voltage 30 V
Gate to Source Voltage 20 V
Drain Current -Continuous (Package limited) TC = 25 °C 75
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 120
Single Pulse Avalance Energy (Note 3) 153 mJ
Power Dissipation TC = 25 °C 54
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 2.3
Thermal Resistance, Junction to Ambient (Note 1a) 53
= 25 °C unless otherwise noted
A
= 25 °C 166
C
= 25 °C (Note 1a) 30
A
= 25 °C (Note 1a) 2.4
A
1
mm 3000 units
°C/W
www.fairchildsemi.com
A
W
FDMC8010 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current VGS = 20 V, V
I
= 1 mA, referenced to 25 °C 15 mV/°C
D
= 0 V1μA
GS
= 0 V 100nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.5 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 1 mA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 30 A 0.91.3
GS
= 4.5 V, ID = 25 A1.31.8
GS
= 10 V, ID = 30A, TJ = 125 °C 1.3 2
V
GS
Forward Transconductance VDS = 5 V, ID = 30 A 188 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance 1570 2090 pF
Reverse Transfer Capacitance 167 250 pF
V
= 15 V, VGS = 0 V,
DS
f = 1 MHz
4405 5860 pF
Gate Resistance 0.5 Ω
Turn-On Delay Time
Rise Time 7.5 15 ns
Turn-Off Delay Time 40 64 ns
= 15 V, ID = 30 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
15 27 ns
Fall Time 5.3 11 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V3245nC
Gate to Source Charge 10 nC
V
DD
I
= 30 A
D
= 15 V,
67 94 nC
Gate to Drain “Miller” Charge 9.5 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. E
of 153 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 32 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 47 A.
AS
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 29 46 nC
SF
SS
DS
DF
G
a. 53 °C/W when mounted on a
2
pad of 2 oz copper.
1 in
V
= 0 V, IS = 2 A (Note 2) 0.6 1.2
GS
= 0 V, IS = 30 A (Note 2) 0.7 1.2
V
GS
= 30 A, di/dt = 100 A/μs
I
F
G
2
DF
DS
SF
θJC
SS
49 78 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
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FDMC8010 N-Channel PowerTrench
0.0 0.2 0.4 0.6
0
40
80
120
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
PULSE DURATI ON = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
04080120
0
1
2
3
4
5
VGS = 4 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 3.5 V
VGS = 4.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 30 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
1
2
3
4
5
TJ = 125 oC
ID = 30 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0
0
40
80
120
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25°C unless otherwise noted
J
®
MOSFET
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
O n - R es i s t a n c e vs G a t e t o
Source Voltage
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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FDMC8010 N-Channel PowerTrench
0 20406080
0
2
4
6
8
10
ID = 30 A
VDD = 18 V
V
DD
= 12 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
0.1 1 10 30
100
1000
10000
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
0.001 0.01 0.1 1 10 100 500
1
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TI ME IN AVALANCHE (ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
50
100
150
200
Limited by Package
V
GS
= 4.5 V
R
θJC
= 2.3 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEM PERATURE (
o
C)
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
200
100 μs
10 ms
10 s
100 ms
DC
1 s
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210-1110
100 1000
0.5
1
10
100
1000
3000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH ( sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics
= 25°C unless otherwise noted
J
Figure 8.
C a p a c i t a n c e v s D r a i n
to Source Voltage
®
MOSFET
Figure 9.
U n c l a m p e d I n d u c t i v e
Switching Capability
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
F ig u re 1 1. F or w ar d B ia s Sa f e
Op
erating Area
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Figure 12.
S i n g l e P u l s e M a x i m u m
Power Dissipation
4
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FDMC8010 N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.0001
0.001
0.01
0.1
1
2
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θJA
= 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECT ANGULAR PULSE DURATION ( sec)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25°C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
5
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Dimensional Outline and Pad Layout
FDMC8010 N-Channel PowerTrench
®
MOSFET
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
6
www.fairchildsemi.com
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tm
®
™
tm
tm
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intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
Auto-SPM™
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®
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FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
®
*
®
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®
FRFET
Global Power Resource
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Marking Small Speakers Sound Louder
and Better™
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MicroPak2™
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®
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®
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PowerXS™
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QS™
Quiet Series™
®
®
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
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SMART START™
Solutions for Your Success™
®
SPM
STEALTH™
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SuperSOT™-3
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Sync-Lock™
®
®
®*
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μSerDes™
®
UHC
Ultra FRFET™
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VisualMax™
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XS™
®
®
®
*
FDMC8010 N-Channel PowerTrench
®
MOSFET
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I60
7
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