Fairchild FDD8447L service manual
FDD8447L
40V N-Channel PowerTrench
40V, 50A, 8.5mΩ
Features
Max r
Max r
Fast Switching
RoHS Compliant
= 8.5mΩ at VGS = 10V, ID = 14A
DS(on)
= 11.0mΩ at VGS = 4.5V, ID = 11A
DS(on)
®
MOSFET
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low r
superior performance benefit in the application.
DS(on)
Applications
Inverter
Power Supplies
and optimized BV
D
May 2008
®
technology to
capability to offer
DSS
FDD8447L 40V N-Channel PowerTrench
®
MOSFET
D
G
G
S
D-PAK
TO-252
(TO-252)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
I
S
E
AS
P
D
T
, T
J
STG
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Package Marking and Ordering Information
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25°C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Max Pulse Diode Current 100 A
Drain-Source Avalanche Energy (Note 3) 153 mJ
Power Dissipation TC= 25°C 44
T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 2.8
Thermal Resistance, Junction to Ambient (Note 1a) 40
Thermal Resistance, Junction to Ambient (Note 1b) 96
= 25°C unless otherwise noted
C
= 25°C 57
C
= 25°C (Note 1a) 15.2
A
= 25°C (Note 1a) 3.1
A
= 25°C (Note 1b) 1.3
A
S
A
W T
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8447L FDD8447L D-PAK(TO-252) 13’’ 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev.C3
1
www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
J
∆T
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32V, V
Gate to Source Leakage Current VGS = ±20V, V
I
= 250µA, referenced to 25°C 35 mV/°C
D
= 0V 1 µA
GS
= 0V ±100 nA
GS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5V, ID = 14A 58 S
= 250µA, referenced to 25°C -5 mV/°C
I
D
V
= 10V, ID = 14A 7.0 8.5
GS
= 4.5V, ID = 11A 8.5 11.0
GS
= 10V, ID = 14A, TJ=125°C 10.4 14.0
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 250 pF
Reverse Transfer Capacitance 150 pF
V
= 20V, VGS = 0V,
DS
f = 1MHz
1970 pF
Gate Resistance f = 1MHz 1.27 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 12 21 ns
Turn-Off Delay Time 38 61 ns
VDD = 20V, ID = 1A
= 10V, R
V
GS
GEN
= 6Ω
Fall Time 9 18 ns
Total Gate Charge, V
Total Gate Charge, V
Gate to Source Gate Charge 6 nC
= 10V
GS
= 5V 20 28 nC
GS
VDD = 20V, ID = 14A
= 10V
V
GS
Gate to Drain “Miller” Charge 7 nC
12 21 ns
37 52 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
θJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25
4
FDD8447L Rev.C3
Maximum Continuous Drain-Source Diode Forward Current (Note 1a) 2.6 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 11 nC
----------------
2 pad of 2 oz copper
o
C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
= 0V, IS = 14A (Note 2) 0.8 1.2 V
GS
= 14A, di/dt = 100A/µs
I
F
22 ns
2
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