FDD8447L
40V N-Channel PowerTrench
40V, 50A, 8.5mΩ
Features
Max r
Max r
Fast Switching
RoHS Compliant
= 8.5mΩ at VGS = 10V, ID = 14A
DS(on)
= 11.0mΩ at VGS = 4.5V, ID = 11A
DS(on)
®
MOSFET
General Description
This N-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low r
superior performance benefit in the application.
DS(on)
Applications
Inverter
Power Supplies
and optimized BV
D
May 2008
®
technology to
capability to offer
DSS
FDD8447L 40V N-Channel PowerTrench
®
MOSFET
D
G
G
S
D-PAK
TO-252
(TO-252)
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
I
S
E
AS
P
D
T
, T
J
STG
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Package Marking and Ordering Information
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25°C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Max Pulse Diode Current 100 A
Drain-Source Avalanche Energy (Note 3) 153 mJ
Power Dissipation TC= 25°C 44
T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 2.8
Thermal Resistance, Junction to Ambient (Note 1a) 40
Thermal Resistance, Junction to Ambient (Note 1b) 96
= 25°C unless otherwise noted
C
= 25°C 57
C
= 25°C (Note 1a) 15.2
A
= 25°C (Note 1a) 3.1
A
= 25°C (Note 1b) 1.3
A
S
A
W T
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDD8447L FDD8447L D-PAK(TO-252) 13’’ 12mm 2500 units
©2008 Fairchild Semiconductor Corporation
FDD8447L Rev.C3
1
www.fairchildsemi.com
FDD8447L 40V N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
J
∆T
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32V, V
Gate to Source Leakage Current VGS = ±20V, V
I
= 250µA, referenced to 25°C 35 mV/°C
D
= 0V 1 µA
GS
= 0V ±100 nA
GS
(Note 2)
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.0 1.9 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDS = 5V, ID = 14A 58 S
= 250µA, referenced to 25°C -5 mV/°C
I
D
V
= 10V, ID = 14A 7.0 8.5
GS
= 4.5V, ID = 11A 8.5 11.0
GS
= 10V, ID = 14A, TJ=125°C 10.4 14.0
V
GS
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 250 pF
Reverse Transfer Capacitance 150 pF
V
= 20V, VGS = 0V,
DS
f = 1MHz
1970 pF
Gate Resistance f = 1MHz 1.27 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 12 21 ns
Turn-Off Delay Time 38 61 ns
VDD = 20V, ID = 1A
= 10V, R
V
GS
GEN
= 6Ω
Fall Time 9 18 ns
Total Gate Charge, V
Total Gate Charge, V
Gate to Source Gate Charge 6 nC
= 10V
GS
= 5V 20 28 nC
GS
VDD = 20V, ID = 14A
= 10V
V
GS
Gate to Drain “Miller” Charge 7 nC
12 21 ns
37 52 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Notes:
1: R
is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
θJA
R
θJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25
4
FDD8447L Rev.C3
Maximum Continuous Drain-Source Diode Forward Current (Note 1a) 2.6 A
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 11 nC
----------------
2 pad of 2 oz copper
o
C, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V.
= 0V, IS = 14A (Note 2) 0.8 1.2 V
GS
= 14A, di/dt = 100A/µs
I
F
22 ns
2
www.fairchildsemi.com
Typical Characteristics
FDD8447L 40V N-Channel PowerTrench
100
, DRAIN CURRENT (A)
D
I
VGS = 10V
80
60
40
20
6.0V
5.0V
0
00.511.522.5
, DRAIN-SOURCE VOLTAGE (V)
V
DS
4.0V
4.5V
3.5V
3.0V
3
VGS = 3.0V
2.6
2.2
1.8
NORMALIZED
3.5V
1.4
1
DRAIN-SOURCE ON-RESISTANCE
0.6
0 20406080100
4.0V
4.5V
I
, DRAIN CURRENT (A)
D
5.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
1.6
ID = 14A
V
= 10V
GS
1.4
1.2
1
NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -2 5 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.02
0.0175
0.015
0.0125
0.01
, ON-RESISTANCE (OHM)
DS(ON)
r
TA = 25oC
0.0075
0.005
246810
VGS, GATE TO SOURCE VOLTAGE ( V)
TA = 125oC
6.0V
10.0V
®
MOSFET
ID = 7A
Figure 3. On-Resistance Variation with
Temperature
100
VDS = 5V
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
11.522.533.544.5
TA = 125oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
-55oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
1000
VGS = 0V
100
10
1
TA = 125oC
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0. 8 1 1.2 1.4
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
25oC
-55oC
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD8447L Rev.C3 3 www.fairchildsemi.com
Typical Characteristics
FDD8447L 40V N-Channel PowerTrench
10
ID = 14A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0 10203040
Q
, GATE CHARGE (nC)
g
VDS = 10V
30V
20V
3000
2500
2000
1500
1000
CAPACITANCE (pF)
500
C
rss
0
0 10203040
C
oss
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
C
iss
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
1000
100
R
LIMIT
DS(ON)
1ms
1s
10ms
100ms
10
1
, DRAIN CURRENT (A)
D
I
VGS = 10V
SINGLE PULSE
0.1
= 96oC/W
R
θ
JA
T
= 25oC
0.01
A
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
100µs
100
80
60
40
20
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
f = 1MHz
= 0 V
V
GS
SINGLE PULSE
= 96°C/W
R
JA
θ
= 25°C
T
A
®
MOSFET
100
SINGLE PULSE
= 96°C/W
R
JA
80
60
θ
T
= 25°C
A
100
TJ = 25oC
10
40
20
I(pk), PEAK TRANSIENT CURRE NT (A)
0
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Single Pulse Maximum Peak
Current
, AVALANCHE CURRENT (A)
(AS)
I
1
0.1 1 10
, TIME IN AVANCHE(ms)
t
AV
Figure 12. Unclamped Inductive Switching
Capability
FDD8447L Rev.C3 4 www.fairchildsemi.com
Typical Characteristics
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.05
0.02
0.01
SINGLE
, TIME (sec)
t
1
R
(t) = r(t) * R
JA
θ
R
= 96°C/W
JA
θ
P(pk)
t
1
t
2
T
- TA = P * R
J
Duty Cycle, D = t
FDD8447L 40V N-Channel PowerTrench
JA
θ
(t)
JA
θ
/ t
1
2
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Figure 13. Transient Thermal Response Curve
®
MOSFET
FDD8447L Rev.C3 5 www.fairchildsemi.com
TRADEMARKS
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™ *
™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
®
®
®
®
®
*
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
PDP-SPM™
Power-SPM™
PowerTrench
SM
Programmable Active Droop™
QFET
®
®
QS™
Quiet Series™
RapidConfigure™
Saving our world 1mW at a time™
SmartMax™
SMART START™
®
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
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The Power Franchise
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TinyWire™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
FDD8447L 40V P-Channel PowerTrench
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDD8447L Rev.C3
6 www.fairchildsemi.com
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