The FAN7080_GF085 is a half-bridge gate drive IC with reset
input and adjustable dead time control. It is designed for high
voltage and high speed driving of MOSFET or IGBT, which
operates up to 600V. Fairchild's high-voltage process and common-mode noise cancellation technique provide stable operation in the high side driver under high-dV/dt noise
circumstances. An advanced level-shift circuit allows high-side
gate driver operation up to VS=-5V (typical) at VBS=15V. Logic
input is compatible with standard CMOS outputs. The UVLO circuits for both channels prevent from malfunction when VCC and
VBS are lower than the specified threshold voltage. Combined
pin function for dead time adjustment and reset shutdown make
this IC packaged with space saving SOIC-8 Package. Minimum
source and sink current capability of output driver is 250mA and
500mA respectively, which is suitable for junction box application and half and full bridge application in the motor drive system.
SOIC-8
Ordering Information
DevicePackage
FAN7080MSOIC-8-40 °C ~ 125 °C
FAN7080MXSOIC-8-40 °C ~ 125 °C
1VCCPDriver supply voltage
2INILogic input for high and low side gate drive output
3SD
4COMPGround
5LOALow side gate drive output for MOSFET Gate connection
6VSAHigh side floating offset for MOSFET Source connection
7HOAHigh side drive output for MOSFET Gate connection
8VBPDriver output stage supply
/DTIShut down input and dead time setting
FAN7080_GF085 Rev. 1.0.0
2www.fairchildsemi.com
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM.
ParameterSymbolMin.Max.Unit
High side floating supply offset voltageVSVB-25VB+0.3V
High side floating supply voltageV
High side floating output voltageV
Low side output voltageV
Supply voltageV
Input voltage for IN
Input injection current. Full function, no lat ch
up;(Guaranteed by design). Test at 10V and
17V on Eng.Samples
Power DissipationPd0.625W
Thermal resistance, junction to ambientRthja200°C/W
Electrostatic discharge voltage
(Human Body Model)
Charge device modelV
Junction TemperatureTj150°C
Storage TemperatureT
Note: 1) The thermal resistance and power dissipation rating are measu red bellow conditions;
JESD51-2: Integrated Circuit Thermal Test Method Environmental Conditions - Natural convection(StillAir)
JESD51-3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package
For proper operation the device should be used within the recommended conditions.
ParameterSymbolMin.Max.Unit
High side floating supply voltage(DC)
Transient:-10V@ 0.1 us
High side floating supply offset voltage(DC)
Transient: -25V(max) @0.1us @VBS<25V
High side floating output voltageV
Low side output voltageV
Allowable offset voltage Slew Rate
2)
Supply voltage for logic partV
Logic input voltageV
Switching Frequency
3)
Ambient TemperatureT
Note: 1) The Vs offset is tested with all supplies biased at 15V differential.
2) Guaranteed by design.
3) When VDT= 1.2V.
1)
VB
VS + 6VS + 20V
VS-5600V
HOVsVBV
LO0VCCV
dv/dt-50V/ns
CC5.520V
IN0VccV
Fs200KHz
a-40125°C
FAN7080_GF085 Rev. 1.0.0
3www.fairchildsemi.com
Statics Electrical Characteristics
Unless otherwise specified, -40°C <= Ta <= 125°C, VCC = 15V, VBS = 15V, VS = 0V, CL = 1nF.
ParameterSymbolConditionsMin.Typ.Max. Unit
Vcc and VBS supply Characteristics
V
CC and VBS supply under voltage
positive going threshold
CC and VBS supply under voltage
V
negative going threshold
CC and VBS supply under voltage
V
hysteresis
Under voltage lockout response timetduvcc
Offset supply leakage currentI
Quiescent V
BS supply currentIQBSVIN=0 OR 5V, VSDT = 1.2V2075150uA
Quiescent Vcc supply currentI
Input Characteristics
High logic level input voltageV
Low logic level input voltageV
High logic level input bias current for INI
Low logic level input bias current for INII
VSDT dead time setting rangeV
VSDT shutdown threshold voltageV
High logic level resistance for SD
/DTRSDTVSDT=5V1005001100KΩ
Low logic level input bias current for SD
Output characteristics
High level output voltage, V
Low level output voltage, V
CC-VHOVOH(HO)IO=0--0.1V
HOVOL(HO)IO=0--0.1V
Output high short circuit pulse currentI
Output low short circuit pulse currentI
Equivalent output resistance R
High level output voltage, V
Low level output voltage, V
B-VLOVOH(LO)IO=0--0.1V
LOVOL(LO)IO=0--0.1V
Output high short circuit pulse currentI
Output low short circuit pulse currentI
Equivalent output resistance R
VCCUV+
--4.25.5V
VBSUV+
VCCUV-
BSUV-
V
VCCUVH
-2.83.6-V
-0.20.6-V
VBSUVH
VCC: 6V-->2.5V or 2.5V-->6V
tduvbs
LKVB=VS=600V-2050uA
QCCVIN=0 OR 5, VSDT = 1.2V-3501000uA
IH2.7--V
IL--0.8V
IN+VIN=5V-1050uA
N-VIN=0V-02uA
DT1.2-5V
SD-0.81.2V
/DT
ISDT-
O+(HO)250300-mA
O-(HO)500600-mA
OP(HO)
ON(HO)--30Ω
R
O+(LO)250--mA
O-(LO)500--mA
OP(LO)--60Ω
ON(LO)--30Ω
R
VBS: 6V-->2.5V or 2.5V-->6V
VSDT=0V-12uA
0.5
0.5
-
-
20
20
--60Ω
FAN7080_GF085 Half Bridge Gate Driver
us
us
FAN7080_GF085 Rev. 1.0.0
4www.fairchildsemi.com
Dynamic Electrical Characteristics
Unless otherwise specified, -40°C <= Ta <= 125°C, VCC = 15V, VBS = 15V, VS = 0V, CL = 1nF.
ParameterSymbolConditionsMin.Typ.Max.Unit
Turn-on propagation delaytonVS=0V-7501500ns
Turn-off propagation delaytoffV
Turn -on rising timetr--40150ns
Turn -off falling timetf--25400ns
Dead time, LS turn-off to HS turn-on
and HS turn-on to LS turn-off
Dead time matching timeMDTDT1 -DT2@ VDT=1.2V
Delay Matching, HS and LS turn-onMTON VDT=1.2V-25110ns
Delay Matching, HS and LS turn-offMTOFF VDT=1.2V1560ns
Shutdown propagation delayTsd-180330ns
Switching FrequencyFs1V
DTV
Fs2V
IN=0 or 5V@ VDT=1.2V
IN=0 or 5V@ VDT=3.3V
V
DT1 -DT2@ VDT=3.3V
S=0V-130250ns
250
1600
CC=VBS=20V --200KHz
CC=VBS=5.5V --200KHZ
650
2100
-35-110
1200
2600
300
FAN7080_GF085 Half Bridge Gate Driver
ns
ns
FAN7080_GF085 Rev. 1.0.0
5www.fairchildsemi.com
Typical Application Circuit
VCC
FAN7080_GF085 Half Bridge Gate Driver
Up to 600V
1
IN
R1
VDT
SHUTDOWN
/DEAD TIME
R2
VDT = Vdd*R2 / (R1+R2). Vdd is output voltage of Microcontroller.
The operating range that allows a VDT r ange of 1. 2 ~3 .3V.
When pulled lower than V
Care must be taken to avoid bel ow thresh old spi kes on pin 3 that can cause undes ired shut down of the IC.
For this reason the connection of the compon ents bet ween pi n 3 and ground has to be as short as possi ble.
And a capacitor (Typ 0.02uF )between pin3 and COM can prevent this spike. This pin can not be left
floating for the same reason.
DT [Typ. 0.5V] the device is shutdown.
VCC
2
IN
3
SD/DT
4
COM
VB
HO
VS
LO
8
7
To Load
6
5
FAN7080_GF085 Rev. 1.0.0
6www.fairchildsemi.com
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