Fairchild BC847BS service manual

BC847BS

NPN Multi-chip General Purpose Amplifier

This device is designed for general purpose amplifier applications at collector currents to 200 mA.
Sourced from Process 07.

E2

B2

Dual NPN Signal Transister

SC70-6

Mark: .1F

C1

Pin #1

E1

B1

C2

NOTE: The pinouts are symmetrical; pin 1 and pin

4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.

BC847BS

June 2007

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

a

Symbol Parameter Value Units

V

CBO

V

CES

V

CEO

V

EBO

I

C

T

J, TSTG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics * T

Collector-Base Voltage 50 V
Collector-Base Voltage 50 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 6.0 V
Collector Current (DC) 100 mA
Junction Temperature an d Storage Temperature -55 ~ +150 °C

= 25°C unless otherwise noted

a

Symbol Characteristic Max Units

PD

Total Device Dissipation

Derate above 25℃

R θ JA Thermal Resistance, Junction to Ambient 625 ℃/W

*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.

210

1.6

mW

mW/℃

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

BC847BS Rev. A

BC847BS

Electrical Characteristics * T

= 25°C unless otherwise noted

a

Symbol Parameter Test Condition MIN MAX Units

Off Characteristics

V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 μA, IE = 0 50 V
V(BR)CES Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V
V(BR)CEO Collector-Base Breakdown Voltage IC = 10 mA, IB = 0 45 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
ICBO Collector-Cutoff Current VCB = 30 V, IE = 0

VCB = 30 V, IE = 0, TA = 150°C

15

5.0

On Characteristics

hFE DC Current Gain IC = 2.0 mA, VCE = 5.0 V 200 450
VCE(sat) Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5.0 mA

VBE(on) Emitter-Base Breakdown Voltage * IC = 2.0 mA, VCE = 5.0 V

IC = 10 mA, VCE = 5.0 V

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.

0.58 0.7

0.25

0.65

0.77

nA
μA

V
V

V
V

BC847BS Rev. A

2 www.fairchildsemi.com