BC846 - BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
• Complement to BC856 ... BC860
April 2011
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
BC846 - BC850 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
V
V
P
T
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* T
Collector-Base Voltage : BC846
CBO
: BC847/850
: BC848/849
Collector-Emitter Voltage : BC846
CEO
: BC847/850
: BC848/849
Emitter-Base Voltage : BC846/847
EBO
: BC848/849/850
Collector Current (DC) 100 mA
I
C
Collector Power Dissipation 310 mW
C
Junction Temperature 150 °C
T
J
Storage Temperature -65 to 150 °C
STG
= 25°C unless otherwise noted
a
80
50
30
65
45
30
6
5
V
V
V
V
V
V
V
V
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
V
CE
V
BE
V
BE
C
C
NF Noise Figure
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Collector Cut-off Current VCB=30V, IE=0 15 nA
DC Current Gain VCE=5V, IC=2mA 110 800
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
I
=100mA, IB=5mA
C
(sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA
=100mA, IB=5mA
I
C
(on) Base-Emitter On Voltage VCE=5V, IC=2mA
=5V, IC=10mA
V
CE
Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
f
T
Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
ob
Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF
ib
: BC846/847/848
: BC849/850
: BC849
: BC850
= 5V, IC= 200μA
V
CE
=2KΩ, f=1KHz
R
G
= 5V, IC= 200μA
V
CE
=2KΩ, f=30~15000Hz
R
G
580 660 700
90
200
700
900
2
1.2
1.4
1.4
250
600
720
10
4
4
3
mV
mV
mV
mV
mV
mV
dB
dB
dB
dB
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 - BC850 Rev. B1 1
h
Classification
FE
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
Ordering Information
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC846AMTF 8AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846BMTF 8AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846CMTF 8AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847AMTF 8BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847BMTF 8BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847CMTF 8BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848AMTF 8CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848BMTF 8CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848CMTF 8CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849AMTF 8DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849BMTF 8DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849CMTF 8DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850AMTF 8EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850BMTF 8EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850CMTF 8EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means SOT-23 package.
Affix “-TF” means the tape & reel type packing.
BC846 - BC850 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 - BC850 Rev. B1 2