Fairchild 2N6520 service manual
2N6520
PNP Epitaxial Silicon Transistor
Features
• High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
• Complement to 2N6517
C
= -350V
CBO
(max)=625mW
June 2009
1
1. Emitter 2. Base 3. Collector
TO-92
2N6520 — PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Unit
V
V
V
T
CBO
CEO
EBO
I
I
P
T
STG
C
B
C
J
Collector-Base Voltage -350 V
Collector-Emitter Voltage -350 V
Emitter-Base Voltage -5 V
Collector Current -500 mA
Base Current -250 mA
Collector Power Dissipation 0.625 W
Derate above 25°C5mW/°C
Junction Temperature 150 °C
Storage Temperature -55 to +150 °C
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6520 Rev. B1 1
2N6520 — PNP Epitaxial Silicon Transistor
Electrical Characteristics T
=25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min. Max. Units
BV
BV
BV
I
CBO
I
EBO
h
V
CE
V
BE
V
BE
C
C
t
ON
t
OFF
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -100μA, IE=0 -350 V
CBO
* Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -350 V
CEO
Emitter-Base Breakdown Voltage IE= -10μA, IC=0 -5 V
EBO
Collector Cut-off Current VCB= -250V, IE=0 -50 nA
Emitter Cut-off Current VEB= -4V, IC=0 -50 nA
* DC Current Gain VCE= -10V, IC= -1mA
FE
= -10V, IC= -10mA
V
CE
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
= -10V, IC= -100mA
V
CE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA
= -20mA, IB= -2mA
I
C
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
= -30mA, IB= -3mA
I
C
20
30
30
20
15
200
200
-0.30
-0.35
-0.50
-1
-0.75
-0.85
-0.90
(on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V
f
* Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz 40 200 MHz
T
Output Capacitance VCB= -20V, IE=0, f=1MHz 6 pF
ob
Emitter-Base Capacitance VEB= -0.5V, IC=0, f=1MHz 100 pF
EB
Turn On Time VBE (off)= -2V, VCC= -100V
= -50mA, IB1= -10mA
I
C
Turn Off Time VCC= -100V, IC= -50mA
= -10mA
I
B1=IB2
200 ns
3.5 ns
V
V
V
V
V
V
V
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N6520 Rev. B1 2
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