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2N6520
High Voltage Transistor
• Collector-Emitter Voltage: V
• Collector Dissipation: P
• Complement to 2N6517
PNP Epitaxial Silicon Transistor
= -350V
CEO
(max)=625mW
C
1
TO-92
1. Emitter 2. Base 3. Collector
2N6520
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Collector-Base Voltage -350 V
Collector-Emitter Voltage -350 V
Emitter-Base Voltage -5 V
Collector Current -500 mA
Base Current -250 mA
Collector Power Dissipation 0.625 W
Derate above 25 5 mW/°C
T
J
T
STG
Electrical Characteristics
Junction Temperature 50 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector -Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA
V
BE
(on) Base-Emitter On Voltage VCE= -10V, IC= -100mA -2 V
V
BE
f
T
C
ob
C
EB
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -350 V
* Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -350 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -250V, IE=0 -50 nA
Emitter Cut-off Current VEB= -4V, IC=0 -50 nA
* DC Current Gain VCE= -10V, IC= -1mA
= -10V, IC= -10mA
V
CE
= -10V, IC= -30mA
V
CE
= -10V, IC= -50mA
V
CE
= -10V, IC= -100mA
V
CE
20
30
30
20
15
200
200
-0.30
= -20mA, IB= -2mA
I
C
I
= -30mA, IB= -3mA
C
= -50mA, IB= -5mA
I
C
-0.35
-0.50
-1
-0.75
= -20mA, IB= -2mA
I
C
= -30mA, IB= -3mA
I
C
-0.85
-0.90
* Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=20MHz 40 200 MHz
Output Capaci tance VCB= -20V, IE=0, f=1MHz 6 pF
Emitter-Base Capacitance VEB= -0.5V, IC=0, f=1MHz 100 pF
Turn On Time VBE (off)= -2V, VCC= -100V
= -50mA, IB1= -10mA
I
C
Turn Off Time VCC= -100V, IC= -50mA
= -10mA
I
B1=IB2
200 ns
3.5 ns
V
V
V
V
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 2
Typical Characteristics
2N6520
1000
VCE = -20V
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000 - 10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
1000
100
t[ns] ,TIME
tD @ VBE(off)=-2.0V
t
R
VCE(off) = -100V
IC/IB= 5
TJ=25oC
-10000
IC = 10 I
B
-1000
-100
(sat)[mV], S A TURA T I ON VO LTAG E
CE
(sat), V
BE
V
-10
-1 -10 -100 -1000 -10000
VCE(sat)
VBE(sat)
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
t
1000
t[ns] ,TIME
100
STG
t
F
VCE(off) = -100V
IC/IB= 5
I
= I
B1
B2
TJ=25oC
10
-1 -10 -100
IC[mA], COLLECTOR CURRENT
-1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. Turn-On Time Figure 4. Turn-Off Time
3.0
2.5
IC/IB = 10
2.0
1.5
1.0
0.5
R
for V
!
VB
R
θ
VC
BE
for VCE(sat)
0.0
-0.5
-1.0
C], THERMAL COEFFICIENTS
o
-1.5
-2.0
R[mV/
-2.5
-1 -10 -100
-55oC to 125oC
-55oC to 125oC
IC[mA], COLLECTOR CURRENT
-55oC to 25oC
100
f=1MHz
10
[pF], CAPACITANCE
ob
[pF], C
ib
C
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
C
ib
C
ob
Figure 5. Temperature Coefficients Figure 6. Capacitance
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 3
2N6520
Typical Characteristics
1000
100
10
-1 -10 -100
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
(Continued)
VCE = -20V
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Page 4
Package Dimensions
0.46
±0.10
4.58
+0.25
–0.15
2N6520
TO-92
±0.20
4.58
±0.40
1.27TYP
[1.27
±0.20
3.86MAX
±0.10
1.02
+0.10
–0.05
0.38
14.47
1.27TYP
]
3.60
±0.20
[1.27
±0.20
]
0.38
+0.10
–0.05
(0.25)
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Page 6
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